CY7C024AV-25AC Cypress Semiconductor Corp, CY7C024AV-25AC Datasheet - Page 9

IC SRAM 64KBIT 25NS 100LQFP

CY7C024AV-25AC

Manufacturer Part Number
CY7C024AV-25AC
Description
IC SRAM 64KBIT 25NS 100LQFP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C024AV-25AC

Format - Memory
RAM
Memory Type
SRAM - Dual Port, Asynchronous
Memory Size
64K (4K x 16)
Speed
25ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
428-1155

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C024AV-25AC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C024AV-25AC
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Document #: 38-06052 Rev. *B
AC Test Loads and Waveforms
Switching Characteristics
OUTPUT
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Notes:
18. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
19. To access RAM, CE=L, UB=L, SEM=H. To access semaphore, CE=H and SEM=L. Either condition must be valid for the entire t
20. At any given temperature and voltage condition for any given device, t
21. Test conditions used are Load 3.
22. This parameter is guaranteed but not tested. For information on port-to-port delay through RAM cells from writing port to reading port, refer to Read Timing
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
ABE
WC
SCE
AW
HA
SA
PWE
SD
Read Cycle
Write Cycle
C = 30 pF
(a) Normal Load (Load 1)
[19]
[22]
[22]
Parameter
[19]
[19]
[19]
I
with Busy waveform.
OI
[20, 21, 22]
[20, 21, 22]
[20, 21, 22]
[20, 21, 22]
/I
OH
and 30-pF load capacitance.
Read Cycle Time
Address to Data Valid
Output Hold From Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE Low to Low Z
OE HIGH to High Z
CE LOW to Low Z
CE HIGH to High Z
CE LOW to Power-Up
CE HIGH to Power-Down
Byte Enable Access Time
Write Cycle Time
CE LOW to Write End
Address Valid to Write End
Address Hold From Write End
Address Set-up to Write Start
Write Pulse Width
Data Set-up to Write End
3.3V
R1 = 590
R2 = 435
Over the Operating Range
GND
3.0V
Description
OUTPUT
3 ns
(b) Thévenin Equivalent (Load 1)
10%
C = 30pF
ALL INPUT PULSES
90%
HZCE
R
[18]
TH
is less than t
= 250
LZCE
90%
Min.
V
and t
20
20
15
15
15
15
TH
10%
3
3
3
0
0
0
CY7C0241AV/0251AV/036AV
HZOE
= 1.4V
CY7C0241AV/0251AV/036AV
CY7C024AV/025AV/026AV
-20
3 ns
CY7C024AV/025AV/026AV
is less than t
Max.
OUTPUT
20
20
12
12
12
20
20
(Used for t
(c) Three-State Delay(Load 2)
C = 5 pF
including scope and jig)
LZOE
.
SCE
Min.
25
time.
25
20
20
20
15
3
3
3
0
0
0
LZ
, t
-25
HZ
, t
Max.
HZWE
25
25
13
15
15
25
25
3.3V
Page 9 of 19
R1 = 590
, and t
R2 = 435
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
LZWE

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