CY7C1357C-133AXC Cypress Semiconductor Corp, CY7C1357C-133AXC Datasheet - Page 22
![IC SRAM 9MBIT 133MHZ 100LQFP](/photos/6/76/67624/428-100-tqfp_14x20x1_4_sml.jpg)
CY7C1357C-133AXC
Manufacturer Part Number
CY7C1357C-133AXC
Description
IC SRAM 9MBIT 133MHZ 100LQFP
Manufacturer
Cypress Semiconductor Corp
Type
Synchronousr
Datasheet
1.CY7C1355C-133AXC.pdf
(32 pages)
Specifications of CY7C1357C-133AXC
Memory Size
9M (512K x 18)
Package / Case
100-LQFP
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Speed
133MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Access Time
6.5 ns
Maximum Clock Frequency
133 MHz
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3.135 V
Maximum Operating Current
250 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Number Of Ports
2
Operating Supply Voltage
3.3 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
428-2123
CY7C1357C-133AXC
CY7C1357C-133AXC
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1357C-133AXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
135
Company:
Part Number:
CY7C1357C-133AXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Company:
Part Number:
CY7C1357C-133AXCT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Switching Characteristics
Over the Operating Range
Document Number: 38-05539 Rev. *H
t
Clock
t
t
t
Output Times
t
t
t
t
t
t
t
Set-up Times
t
t
t
t
t
t
Hold Times
t
t
t
t
t
t
Notes
POWER
CYC
CH
CL
CDV
DOH
CLZ
CHZ
OEV
OELZ
OEHZ
AS
ALS
WES
CENS
DS
CES
AH
ALH
WEH
CENH
DH
CEH
16. Timing reference level is 1.5 V when V
17. Test conditions shown in (a) of AC Test Loads unless otherwise noted.
18. This part has a voltage regulator internally; t
19. t
20. At any given voltage and temperature, t
21. This parameter is sampled and not 100% tested.
Parameter
can be initiated.
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve high Z prior to low Z under the same system conditions.
CHZ
, t
CLZ
,t
OELZ
, and t
OEHZ
V
Clock cycle time
Clock HIGH
Clock LOW
Data output valid after CLK rise
Data output hold after CLK rise
Clock to low Z
Clock to high Z
OE LOW to output valid
OE LOW to output low Z
OE HIGH to output high Z
Address set-up before CLK rise
ADV/LD set-up before CLK rise
WE, BW
CEN set-up before CLK rise
Data input set-up before CLK rise
Chip enable set-up before CLK rise
Address hold after CLK rise
ADV/LD hold after CLK rise
WE, BW
CEN hold after CLK rise
Data input hold after CLK rise
Chip enable hold after CLK rise
are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.
DD
[16, 17]
(typical) to the first access
X
X
DDQ
OEHZ
set-up before CLK rise
hold after CLK rise
POWER
= 3.3 V and is 1.25 V when V
is less than t
[19, 20, 21]
[19, 20, 21]
is the time that the power needs to be supplied above V
Description
OELZ
[19, 20, 21]
[19, 20, 21]
and t
[18]
CHZ
is less than t
DDQ
= 2.5 V.
CLZ
to eliminate bus contention between SRAMs when sharing the same
Min
7.5
3.0
3.0
2.0
1.5
1.5
1.5
1.5
1.5
1.5
0.5
0.5
0.5
0.5
0.5
0.5
1
–
0
–
–
0
–
–133
DD
(minimum) initially, before a read or write operation
Max
6.5
3.5
3.5
3.5
CY7C1355C, CY7C1357C
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Min
4.0
4.0
2.0
1.5
1.5
1.5
1.5
1.5
1.5
0.5
0.5
0.5
0.5
0.5
0.5
10
1
–
0
–
–
0
–
–100
Max
7.5
3.5
3.5
3.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Page 22 of 32
Unit
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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