IS61LPS51236A-200TQLI ISSI, Integrated Silicon Solution Inc, IS61LPS51236A-200TQLI Datasheet - Page 14

• Manufacturer Part Number: IS61LPS51236A-200TQLI
• Description: IC SRAM 18MBIT 200MHZ 100TQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LPS51236A-200TQLI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 18M (512K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Density: 18Mb
• Access Time (max): 3.1ns
• Sync/async: Synchronous
• Architecture: SDR
• Clock Freq (max): 200MHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 19b
• Package Type: TQFP
• Operating Temp Range: -40C to 85C
• Number Of Ports: 4
• Supply Current: 475mA
• Operating Supply Voltage (min): 3.135V
• Operating Supply Voltage (max): 3.465V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 100
• Word Size: 36b
• Number Of Words: 512K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 706-1100; IS61LPS51236A-200TQLI

IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
OPERATING RANGE (IS61LPSXXXXX)
OPERATING RANGE (IS61VPSXXXXX)
POWER SUPPLY CHARACTERISTICS
Note:
1. MODE pin has an internal pullup and should be tied to V
14
DC ELECTRICAL CHARACTERISTICS
Symbol Parameter
I
I
I
I
Symbol
V
V
V
V
I
I
CC
SB
SBI
SB
LI
LO
Range
Commercial
Industrial
Range
Commercial
Industrial
V
OH
OL
IH
IL
2
SS
+ 0.2V or ≥ V
AC Operating
Supply Current
Standby Current
TTL Input
Standby Current
CMOS Input
Sleep Mode
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current Vss ≤ V
DD
– 0.2V.
Ambient Temperature
Ambient Temperature
–40°C to +85°C
–40°C to +85°C
0°C to +70°C
0°C to +70°C
Test Conditions
Device Selected,
OE = V
Cycle Time ≥ t
Device Deselected,
V
All Inputs ≤ V
ZZ ≤ V
Device Deselected,
V
V
ZZ>V
All Inputs ≤ 0.2V or ≥ V
f = 0
DD
DD
IN
≤ V
= Max.,
= Max.,
IH
IL
IH
SS
, f = Max.
, ZZ ≤ V
+ 0.2V or ≥V
Test Conditions
I
I
I
I
Vss ≤ V
OE = V
OH
OH
OL
OL
IL
KC
or ≥ V
= 8.0 mA (3.3V)
= 1.0 mA (2.5V)
= –4.0 mA (3.3V)
= –1.0 mA (2.5V)
IL
min.
,
IH
IH
IN
OUT
,
DD
DD
(1)
≤ V
– 0.2V
(Over Operating Range)
– 0.2V,
≤ V
(Over Operating Range)
3.3V + 5%
3.3V + 5%
2.5V + 5%
2.5V + 5%
DD
Temp. range x18
DDQ
DD
(1)
Com.
Com.
Com.
Com.
V
V
Ind.
Ind.
Ind.
Ind.
DD
DD
or V
,
SS
. It exhibits ±100µA maximum leakage current when tied to ≤
450
500
150
150
110
125
60
75
Min.
-0.3
2.4
2.0
Integrated Silicon Solution, Inc. — 1-800-379-4774
—
-5
-5
3.3V
-250
MAX
450
500
150
110
150
125
x36
60
75
V
3.3V / 2.5V + 5%
3.3V / 2.5V + 5%
DD
Max.
0.4
0.8
2.5V + 5%
2.5V + 5%
—
5
5
+ 0.3
V
V
600
650
150
150
110
125
x72
60
75
DDQ
DDQ
425
475
150
150
110
125
x18
60
75
Min.
-0.3
2.0
1.7
—
-5
-5
2.5V
-200
MAX
425
475
150
150
110
125
x36
60
75
V
DD
Max.
0.4
0.7
—
5
5
+ 0.3
550
600
150
150
110
125
x72
60
75
Unit
02/12/2010
µA
µA
V
V
V
V
Rev. N
Unit
mA
mA
mA
mA