IS61LV256AL-10JLI ISSI, Integrated Silicon Solution Inc, IS61LV256AL-10JLI Datasheet - Page 4

• Manufacturer Part Number: IS61LV256AL-10JLI
• Description: IC SRAM 256KBIT 10NS 28SOJ
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: Asynchronousr

Specifications of IS61LV256AL-10JLI

• Memory Size: 256K (32K x 8)
• Package / Case: 28-SOJ
• Interface: Parallel
• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Speed: 10ns
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 10 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3.135 V
• Maximum Operating Current: 25 mA
• Organization: 256 K x 16
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 3.3 V
• Density: 256Kb
• Access Time (max): 10ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 15b
• Package Type: SOJ
• Operating Temp Range: -40C to 85C
• Supply Current: 25mA
• Operating Supply Voltage (min): 3.135V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 28
• Word Size: 8b
• Number Of Words: 32K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 706-1036

IS61LV256AL
POWER SUPPLY CHARACTERISTICS
Notes:
1. At f = f
2. Typical values are measured at V
CAPACITANCE
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
4
Sym.
I
I
I
I
cc
cc
sb
sb
Symbol
c
c
1
2
1
2
In
out
max
Parameter
V
Supply Current
V
Supply Current
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
dd
dd
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Operating
Dynamic Operating
Parameter
Input Capacitance
Output Capacitance
a
(1,2)
= 25°c, f = 1 MHz, V
dd
= 3.3V, T
Test Conditions
V
I
V
I
V
V
CE ≥ V
V
CE ≥ V
V
V
out
out
dd
dd
dd
In
dd
In
In
dd
= V
≥ V
≤ 0.2V, f = 0
= Max., CE = V
= Max., CE = V
= Max.,
= Max.,
= 0 mA, f = 1 MHz
= 0 mA, f = f
= 3.3V.
Ih
Ih
dd
dd
a
, f = 0
or V
– 0.2V,
– 0.2V, or
= 25
Il
(1)
o
C and not 100% tested.
Conditions
max
V
(Over Operating Range)
V
out
Il
Il
In
= 0V
= 0V
Com.
Com.
Com.
Com.
typ.
typ.
Ind.
Ind.
Ind.
Ind.
(2)
(2)
Integrated Silicon Solution, Inc. — 1-800-379-4774
Min.
—
—
—
—
—
—
—
—
-10 ns
20
Max.
2
6
5
Max.
20
25
30
35
40
50
1
1
Unit
pF
pF
Unit
mA
mA
mA
µA
07/29/09
Rev. C