CY14B101LA-SP45XI Cypress Semiconductor Corp, CY14B101LA-SP45XI Datasheet - Page 14
![IC NVSRAM 1MBIT 45NS 48SSOP](/photos/31/34/313453/42848ssop_sml.jpg)
CY14B101LA-SP45XI
Manufacturer Part Number
CY14B101LA-SP45XI
Description
IC NVSRAM 1MBIT 45NS 48SSOP
Manufacturer
Cypress Semiconductor Corp
Type
NVSRAMr
Datasheet
1.CY14B101LA-SP45XI.pdf
(26 pages)
Specifications of CY14B101LA-SP45XI
Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
1M (128K x 8)
Speed
45ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Word Size
8b
Organization
128Kx8
Density
1Mb
Interface Type
Parallel
Access Time (max)
45ns
Package Type
SSOP
Operating Temperature Classification
Industrial
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
2.7V
Operating Temp Range
-40C to 85C
Pin Count
48
Mounting
Surface Mount
Supply Current
52mA
Memory Configuration
128K X 8
Access Time
45ns
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
SSOP
No. Of Pins
48
Operating Temperature Range
-40°C To +85°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY14B101LA-SP45XI
Manufacturer:
CY
Quantity:
35 792
Part Number:
CY14B101LA-SP45XI
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
AutoStore/Power-Up RECALL
Switching Waveforms
Document #: 001-42879 Rev. *K
Notes
t
t
t
V
t
V
t
t
Parameter
HRECALL
STORE
DELAY
VCCRISE
LZHSB
HHHD
31. t
32. If an SRAM write has not taken place since the last nonvolatile cycle, no AutoStore or Hardware STORE takes place.
33. On a Hardware STORE and AutoStore initiation, SRAM write operation continues to be enabled for time t
34. These parameters are guaranteed by design and are not tested.
35. Read and Write cycles are ignored during STORE, RECALL, and while V
36. During power-up and power-down, HSB glitches when HSB pin is pulled up through an external resistor.
SWITCH
HDIS
HRECALL
[34]
[34]
[34]
[33]
[32]
[34]
[31]
starts from the time V
Read & Write
Inhibited
Power-Up RECALL duration
STORE cycle duration
Time allowed to complete SRAM write cycle
Low voltage trigger level
V
HSB output disable voltage
HSB to output active time
HSB High active time
(RWI)
POWER-
CC
AutoStore
RECALL
HSB OUT
V
UP
rise time
SWITCH
V
V
HDIS
CC
CC
POWER-UP
Description
rises higher than V
RECALL
Note
t
VCCRISE
36
Figure 11. AutoStore or Power-Up RECALL
Read & Write
t
t
t
LZHSB
HRECALL
SWITCH.
HHHD
Note
AutoStore
t
BROWN
DELAY
CC
32
OUT
Min
150
is lower than V
–
–
–
–
–
–
–
t
STORE
20 ns
POWER-UP
RECALL
Max
2.65
500
1.9
20
20
SWITCH.
8
–
5
t
HRECALL
Min
150
t
t
HHHD
LZHSB
–
DELAY
–
–
–
–
–
–
Read & Write
[35]
25 ns
.
t
DELAY
Max
2.65
500
1.9
20
25
8
–
5
Note
AutoStore
POWER
DOWN
32
Min
150
–
–
–
–
–
–
–
CY14B101NA
CY14B101LA
Note
t
45 ns
STORE
36
Max
2.65
500
1.9
25
Page 14 of 26
20
8
–
5
Unit
ms
ms
ns
µs
µs
ns
V
V
[+] Feedback