CY7C024AV-25AXC Cypress Semiconductor Corp, CY7C024AV-25AXC Datasheet - Page 9

IC SRAM 64KBIT 25NS 100LQFP

CY7C024AV-25AXC

Manufacturer Part Number
CY7C024AV-25AXC
Description
IC SRAM 64KBIT 25NS 100LQFP
Manufacturer
Cypress Semiconductor Corp
Type
Asynchronousr
Datasheet

Specifications of CY7C024AV-25AXC

Memory Size
64K (4K x 16)
Package / Case
100-LQFP
Format - Memory
RAM
Memory Type
SRAM - Dual Port, Asynchronous
Speed
25ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Access Time
25 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3 V
Maximum Operating Current
165 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Number Of Ports
2
Operating Supply Voltage
3.3 V
Memory Configuration
4K X 16
Supply Voltage Range
3V To 3.6V
Memory Case Style
TQFP
No. Of Pins
100
Operating Temperature Range
0°C To +70°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
428-1790
CY7C024AV-25AXC

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C024AV-25AXC
Manufacturer:
TI
Quantity:
4 155
Part Number:
CY7C024AV-25AXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C024AV-25AXC
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
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Part Number:
CY7C024AV-25AXCT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Switching Characteristics
Over the Operating Range
Document #: 38-06052 Rev. *M
OUTPUT
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Notes
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
ABE
WC
SCE
AW
HA
SA
20. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified I
21. To access RAM, CE = L, UB = L, SEM = H. To access semaphore, CE = H and SEM = L. Either condition must be valid for the entire t
22. At any given temperature and voltage condition for any given device, t
23. Test conditions used are Load 3.
24. This parameter is guaranteed but not tested. For information on port to port delay through RAM cells from writing port to reading port, refer to
Read Cycle
Write Cycle
C = 30 pF
(a) Normal Load (Load 1)
[24]
[24]
[21]
and 30 pF load capacitance.
[21]
[21]
[21]
Parameter
[22, 23, 24]
[22, 23, 24]
[22, 23, 24]
[22, 23, 24]
Read Cycle Time
Address to Data Valid
Output Hold From Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE Low to Low Z
OE HIGH to High Z
CE LOW to Low Z
CE HIGH to High Z
CE LOW to Power Up
CE HIGH to Power Down
Byte Enable Access Time
Write Cycle Time
CE LOW to Write End
Address Valid to Write End
Address Hold From Write End
Address Setup to Write Start
3.3V
R1 = 590
R2 = 435
[20]
GND
3.0V
Description
Figure 4. AC Test Loads and Waveforms
OUTPUT
3 ns
(b) Thévenin Equivalent (Load 1)
10%
C = 30pF
ALL INPUT PULSES
90%
HZCE
R
TH
is less than t
= 250
LZCE
90%
and t
V
CY7C024AV/024BV/025AV/026AV
TH
10%
Min
HZOE
20
20
15
15
= 1.4V
3
3
3
0
0
0
CY7C024AV/024BV/025AV/026AV
3 ns
is less than t
CY7C0241AV/0251AV/036AV
CY7C0241AV/0251AV/036AV
-20
OUTPUT
Max
20
20
12
12
12
20
20
(Used for t
(c) Three-State Delay (Load 2)
LZOE
C = 5 pF
including scope and jig)
.
LZ
Min
25
25
20
20
3
3
3
0
0
0
, t
SCE
HZ
, t
-25
time.
HZWE
3.3V
Max
25
25
13
15
15
25
25
Figure
R1 = 590
R2 = 435
, and t
Page 9 of 20
12.
LZWE
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
OI
/I
OH
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