CY7C1360C-200AXC Cypress Semiconductor Corp, CY7C1360C-200AXC Datasheet - Page 15

IC SRAM 9MBIT 200MHZ 100LQFP

CY7C1360C-200AXC

Manufacturer Part Number
CY7C1360C-200AXC
Description
IC SRAM 9MBIT 200MHZ 100LQFP
Manufacturer
Cypress Semiconductor Corp
Type
Synchronousr
Datasheet

Specifications of CY7C1360C-200AXC

Memory Size
9M (256K x 36)
Package / Case
100-LQFP
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Speed
200MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Access Time
3 ns
Maximum Clock Frequency
200 MHz
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3.135 V
Maximum Operating Current
220 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Number Of Ports
4
Operating Supply Voltage
3.3 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
428-2126
CY7C1360C-200AXC

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Manufacturer
Quantity
Price
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Manufacturer:
Cypress Semiconductor
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Quantity:
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The user must be aware that the TAP controller clock can only
operate at a frequency up to 20 MHz, while the SRAM clock
operates more than an order of magnitude faster. Because there
is a large difference in the clock frequencies, it is possible that
during the Capture-DR state, an input or output will undergo a
transition. The TAP may then try to capture a signal while in
transition (metastable state). This will not harm the device, but
there is no guarantee as to the value that will be captured.
Repeatable results may not be possible.
To guarantee that the boundary scan register will capture the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller’s capture setup plus hold
times (t
correctly if there is no way in a design to stop (or slow) the clock
during a SAMPLE/PRELOAD instruction. If this is an issue, it is
still possible to capture all other signals and simply ignore the
value of the CK and CK captured in the boundary scan register.
After the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the boundary
scan register between the TDI and TDO pins.
TAP Timing
Document Number: 38-05540 Rev. *K
CS
and t
Test M ode Select
CH
Test Data-Out
). The SRAM clock input might not be captured
Test Data-In
Test Clock
(TDO)
(TM S)
(TCK )
(TDI)
1
t TM SS
t TDIS
2
t TM SH
t TDIH
t TH
DON’T CA RE
t
TL
3
PRELOAD enables an initial data pattern to be placed at the
latched parallel outputs of the boundary scan register cells prior
to the selection of another boundary scan test operation.
The shifting of data for the SAMPLE and PRELOAD phases can
occur concurrently when required - that is, while data captured
is shifted out, the preloaded data can be shifted in.
BYPASS
When the BYPASS instruction is loaded in the instruction register
and the TAP is placed in a Shift-DR state, the bypass register is
placed between the TDI and TDO balls. The advantage of the
BYPASS instruction is that it shortens the boundary scan path
when multiple devices are connected together on a board.
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
t CY C
UNDEFINED
4
t TDOX
t TDOV
CY7C1360C, CY7C1362C
5
6
Page 15 of 34
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