CY7C1357C-133AXI Cypress Semiconductor Corp, CY7C1357C-133AXI Datasheet - Page 18

IC SRAM 9MBIT 133MHZ 100LQFP

CY7C1357C-133AXI

Manufacturer Part Number
CY7C1357C-133AXI
Description
IC SRAM 9MBIT 133MHZ 100LQFP
Manufacturer
Cypress Semiconductor Corp
Type
Synchronousr
Datasheet

Specifications of CY7C1357C-133AXI

Memory Size
9M (512K x 18)
Package / Case
100-LQFP
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Speed
133MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Access Time
6.5 ns
Maximum Clock Frequency
133 MHz
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3.135 V
Maximum Operating Current
250 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
2
Operating Supply Voltage
3.3 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1357C-133AXI
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C1357C-133AXIT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Document #: 38-05539 Rev. *E
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
Supply Voltage on V
DC Voltage Applied to Outputs
in Tri-State........................................... –0.5V to V
Electrical Characteristics
V
V
V
V
V
V
I
I
I
I
I
I
I
Notes:
13. Overshoot: V
14. T
Parameter
X
OZ
DD
SB1
SB2
SB3
SB4
DD
DDQ
OH
OL
IH
IL
Power-up
: Assumes a linear ramp from 0V to V
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
except ZZ and MODE
Input Current of MODE Input = V
Input Current of ZZ
Output Leakage Current GND ≤ V
V
Current
Automatic CE
Power-down
Current—TTL Inputs
Automatic CE
Power-down
Current—CMOS Inputs
Automatic CE
Power-down
Current—CMOS Inputs
Automatic CE
Power-down
Current—TTL Inputs
IH
DD
(AC) < V
Operating Supply
Description
DD
DDQ
DD
Relative to GND........ –0.5V to +4.6V
+1.5V (Pulse width less than t
Relative to GND ...... –0.5V to +V
[13]
[13]
Over the Operating Range
for 3.3V I/O
for 2.5V I/O
for 3.3V I/O, I
for 2.5V I/O, I
for 3.3V I/O, I
for 2.5V I/O, I
for 3.3V I/O
for 2.5V I/O
for 3.3V I/O
for 2.5V I/O
GND ≤ V
Input = V
Input = V
Input = V
V
f = f
V
V
f = f
V
V
f = 0, inputs static
V
V
f = f
V
V
static
DD
DD
DD
IN
DD
IN
DD
IN
DD
IN
(min.) within 200 ms. During this time V
≥ V
MAX
≥ V
MAX
≤ 0.3V or V
≤ 0.3V or V
MAX
= Max, Device Deselected, or
= Max., I
= Max, Device Deselected,
= Max, Device Deselected,
= Max, Device Deselected,
IH
IH
, inputs switching
, inputs switching
= 1/t
CYC
I
SS
DD
SS
DD
I
or V
or V
≤ V
≤ V
DDQ
/2), undershoot: V
CYC
OUT
IN
OH
OH
OL
OL
DDQ
DDQ,
IN
+ 0.5V
IN
IN
≤ V
= 8.0 mA
= 1.0 mA
≤ V
= −4.0 mA
= −1.0 mA
= 0 mA,
> V
> V
Output Disabled
IL
DD
Test Conditions
IL
, f = 0, inputs
DD
DDQ
[13, 14]
– 0.3V,
– 0.3V
IL
DC Input Voltage ................................... –0.5V to V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA.
Operating Range
(AC) > –2V (Pulse width less than t
Commercial
Industrial
Range
IH
All speeds
All speeds
All speeds
All Speeds
7.5-ns cycle, 133 MHz
10-ns cycle, 100 MHz
< V
DD
and V
–40°C to +85°C
Temperature
0°C to +70°C 3.3V – 5%/+10% 2.5V – 5%
Ambient
DDQ
< V
DD
.
CYC
/2).
3.135
3.135
2.375
Min.
–0.3
–0.3
–30
2.4
2.0
2.0
1.7
–5
–5
–5
V
DD
CY7C1355C
CY7C1357C
V
V
DD
DD
2.625
Max.
V
Page 18 of 28
250
100
180
110
3.6
0.4
0.4
0.8
0.7
30
40
40
+ 0.3V
+ 0.3V
5
5
5
DD
DD
to V
V
DDQ
+ 0.5V
DD
Unit
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
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