CY62167EV30LL-45BVXI Cypress Semiconductor Corp, CY62167EV30LL-45BVXI Datasheet - Page 8

• Manufacturer Part Number: CY62167EV30LL-45BVXI
• Description: IC SRAM 16MBIT 45NS 48VFBGA
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY62167EV30LL-45BVXI

• Memory Size: 16M (2M x 8 or 1M x 16)
• Package / Case: 48-VFBGA
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 45 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.2 V
• Maximum Operating Current: 30 mA
• Organization: 1 M x 16
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 2.5 V or 3.3 V
• Memory Configuration: 2M X 8 / 1M X 16
• Supply Voltage Range: 2.2V To 3.6V
• Memory Case Style: BGA
• No. Of Pins: 48
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Switching Waveforms
Document #: 38-05446 Rev. *I
Notes
23. The device is continuously selected. OE, CE
24. WE is HIGH for read cycle.
25. Address valid before or similar to CE
DATA OUT
CURRENT
ADDRESS
BHE/BLE
DATA OUT
SUPPLY
ADDRESS
CE
CE
V
OE
CC
1
2
PREVIOUS DATA VALID
HIGH IMPEDANCE
t
Figure 5. Read Cycle No. 1 (Address Transition Controlled)
PU
1
, BHE, BLE transition LOW and CE
t
LZCE
t
LZBE
1
Figure 6. Read Cycle No. 2 (OE Controlled)
t
t
= V
ACE
LZOE
IL
t
, BHE, BLE or both = V
OHA
50%
t
t
DOE
DBE
t
AA
t
RC
2
IL
transition HIGH.
, and CE
t
RC
RC
2
= V
IH
.
DATA VALID
[24, 25]
[23, 24]
CY62167EV30 MoBL
t
DATA VALID
HZOE
t
HZBE
t
HZCE
t
PD
50%
IMPEDANCE
Page 8 of 16
HIGH
I
I
CC
SB
®
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