CY62167EV30LL-45BVXI Cypress Semiconductor Corp, CY62167EV30LL-45BVXI Datasheet
CY62167EV30LL-45BVXI
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CY62167EV30LL-45BVXI Summary of contents
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... Power Down Circuit Cypress Semiconductor Corporation Document #: 38-05446 Rev. *I 16-Mbit ( Static RAM More Battery Life™ (MoBL cellular telephones. The device also has an automatic power down feature that reduces power consumption by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (CE BLE are HIGH) ...
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Contents Pin Configuration ............................................................. 3 Product Portfolio .............................................................. 3 Maximum Ratings............................................................. 4 Operating Range............................................................... 4 Electrical Characteristics................................................. 4 Capacitance ...................................................................... 4 Thermal Resistance.......................................................... 5 Data Retention Characteristics ....................................... 6 Switching Characteristics................................................ 7 Switching Waveforms ...................................................... 8 Truth Table ...................................................................... 11 ...
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... Product Portfolio Product Range CY62167EV30LL Industrial/Auto-A Notes 1. Ball H6 for the VFBGA package can be used to upgrade to a 32M density pins are not connected on the die. 3. The BYTE pin in the 48-pin TSOPI package has to be tied to V SRAM by tying the BYTE signal the configuration, Pin 45 is A20, while BHE, BLE and I ...
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... Tested initially and after any design or process changes that may affect these parameters. Document #: 38-05446 Rev input voltage Output current into outputs (LOW) ............................. 20 mA Static discharge voltage........................................... >2001 V (MIL-STD-883, Method 3015) Latch-up current ...................................................... >200 mA Operating Range Device + 0 (max) CY62167EV30LL + 0 (max) Test Conditions 2.2 < V < 2 –0 2.7 < V < 3 – ...
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Thermal Resistance [12] Parameter Description Θ Thermal resistance Still air, soldered × 4.5 inch, JA (Junction to ambient) two-layer printed circuit board Θ Thermal resistance JC (Junction to case OUTPUT INCLUDING ...
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Data Retention Characteristics Over the Operating Range Parameter Description V V for data retention DR CC [14] I Data retention current V CCDR (BHE and BLE) > ...
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... HZBE HZWE 22. The internal write time of the memory is defined by the overlap of WE, CE write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing must refer to the edge of the signal that terminates the write. Document #: 38-05446 Rev. *I ...
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Switching Waveforms Figure 5. Read Cycle No. 1 (Address Transition Controlled) ADDRESS DATA OUT PREVIOUS DATA VALID Figure 6. Read Cycle No. 2 (OE Controlled) ADDRESS ACE BHE/BLE t LZBE OE t LZOE HIGH IMPEDANCE ...
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... HZOE Notes 26. The internal write time of the memory is defined by the overlap of WE, CE write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing must refer to the edge of the signal that terminates the write 27. Data I/O is high impedance ...
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Switching Waveforms (continued) Figure 9. Write Cycle No. 3 (WE controlled, OE LOW) ADDRESS BHE/BLE NOTE 31 DATA I/O Figure 10. Write Cycle No. 4 (BHE/BLE controlled, OE LOW) ADDRESS ...
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Truth Table BHE BLE 1 2 [32 [32 [32] [32 ...
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... Ordering Information Speed (ns) Ordering Code 45 CY62167EV30LL-45BVI CY62167EV30LL-45BVXI CY62167EV30LL-45ZXI CY62167EV30LL-45BVXA CY62167EV30LL-45ZXA Ordering Code Definition 45 V30 LL CY 621 Document #: 38-05446 Rev. *I Package Package Type Diagram 51-85150 48-ball VFBGA (6 × 8 × 1 mm) 51-85150 48-ball VFBGA (6 × 8 × 1 mm) (Pb-free) 51-85183 48-pin TSOP I (Pb-free) 51-85150 48-ball VFBGA (6 × ...
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Package Diagrams Figure 11. 48-Ball VFBGA ( mm), 51-85150 Document #: 38-05446 Rev. *I ® CY62167EV30 MoBL 51-85150-*E Page [+] Feedback [+] Feedback ...
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... BLE byte low enable CMOS complementary metal oxide semiconductor CE chip enable I/O input/output OE output enable SRAM static random access memory TSOP thin small outline package VFBGA very fine ball grid array WE write enable Document #: 38-05446 Rev. *I ® CY62167EV30 MoBL 51-85183-*B Page ...
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Document History Page Document Title: CY62167EV30 MoBL Document Number: 38-05446 Orig. of Submission Rev. ECN No. Change ** 202600 AJU 01/23/2004 *A 463674 NXR *B 469169 NSI *C 1130323 VKN *D 1323984 VKN/AESA *E 2678799 VKN/PYRS 03/25/2009 *F 2720234 VKN/AESA ...
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... Cypress against all charges. Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign), United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement ...