M48Z35Y-70MH1E STMicroelectronics, M48Z35Y-70MH1E Datasheet - Page 10

• Manufacturer Part Number: M48Z35Y-70MH1E
• Description: IC NVSRAM 256KBIT 70NS 28SOIC
• Manufacturer: STMicroelectronics

Specifications of M48Z35Y-70MH1E

• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Memory Size: 256K (32K x 8)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 28-SOIC, 28-SOH (8.48mm Width)
• Data Bus Width: 8 bit
• Organization: 32 Kb x 8
• Interface Type: Parallel
• Access Time: 70 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 4.5 V
• Operating Current: 50 mA
• Maximum Operating Temperature: 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Memory Configuration: 32K X 8
• Supply Voltage Range: 4.5V To 5.5V
• Memory Case Style: SOIC
• No. Of Pins: 28
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2883-5; M48Z35Y-70MH1

M48Z35, M48Z35Y
Table 6. Power Down/Up Trip Points DC Characteristics
Note: All voltages referenced to V
Note: 1. Valid for Ambient Operating Temperature: T
V
I
switching, can produce voltage fluctuations, re-
sulting in spikes on the V
can be reduced if capacitors are used to store en-
ergy which stabilizes the V
stored in the bypass capacitors will be released as
low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic by-
pass capacitor value of 0.1µF (see Figure 11) is
recommended in order to provide the needed fil-
tering.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate neg-
ative voltage spikes on V
below V
spikes can cause data corruption in the SRAM
while in battery backup mode. To protect from
these voltage spikes, ST recommends connecting
a schottky diode from V
nected to V
1N5817 is recommended for through hole and
MBRS120T3 is recommended for surface mount).
10/20
CC
CC
Symbol
t
V
transients, including those produced by output
V
DR
Noise And Negative Going Transients
2. At 25°C, V
PFD
SO
(2)
SS
by as much as one volt. These negative
CC
Power-fail Deselect Voltage
Battery Back-up Switchover Voltage
Expected Data Retention Time
, anode to V
CC
= 0V.
CC
CC
CC
SS
.
bus. These transients
to V
CC
that drive it to values
SS
Parameter
). (Schottky diode
bus. The energy
SS
(cathode con-
(1)
A
= 0 to 70°C; V
M48Z35/Y
M48Z35Y
M48Z35
CC
Figure 11. Supply Voltage Protection
= 4.75 to 5.5V or 4.5 to 5.5V (except where noted).
Min
V CC
4.5
4.2
10
0.1 F
4.35
Typ
4.6
3.0
V CC
V SS
Max
4.75
4.5
DEVICE
AI02169
YEARS
Unit
V
V
V