CY62146ELL-45ZSXI Cypress Semiconductor Corp, CY62146ELL-45ZSXI Datasheet
CY62146ELL-45ZSXI
Specifications of CY62146ELL-45ZSXI
CY62146ELL-45ZSXI
Available stocks
Related parts for CY62146ELL-45ZSXI
CY62146ELL-45ZSXI Summary of contents
Page 1
... Cypress Semiconductor Corporation Document Number: 001-07970 Rev. *G 4-Mbit (256K x 16) Static RAM applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE HIGH) ...
Page 2
Contents Pin Configuration ............................................................. 3 Product Portfolio .............................................................. 3 Maximum Ratings ............................................................. 4 Operating Range ............................................................... 4 Electrical Characteristics ................................................. 4 Capacitance ...................................................................... 4 Thermal Resistance .......................................................... 4 Data Retention Characteristics ....................................... 5 Switching Characteristics ................................................ 6 Switching Waveforms ...................................................... ...
Page 3
... Pin Configuration Product Portfolio Product Range Min CY62146ELL Ind’l/Auto-A 4.5 Notes 1. NC pins are not connected on the die. 2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V Document Number: 001-07970 Rev. *G Figure 1. 44-Pin TSOP II (Top View) ...
Page 4
... Chip enable (CE) and byte enables (BHE and BLE) need to be tied to CMOS levels to meet the I 8. Tested initially after any design or process changes that may affect these parameters. Document Number: 001-07970 Rev. *G Output current into outputs (LOW) .............................. 20 mA Static discharge voltage............................................ >2001 V (MIL-STD-883, Method 3015) Latch-up current ...................................................... >200 mA Operating Range Device CY62146ELL Test Conditions I = –1 2 4.5 < V < ...
Page 5
OUTPUT 30 pF INCLUDING JIG AND SCOPE Parameters Data Retention Characteristics Over the Operating Range Parameter Description V V for data retention DR CC [10] I Data retention current CCDR t ...
Page 6
... HZCE HZBE HZWE 17. The internal write time of the memory is defined by the overlap of WE signals can terminate a write by going inactive. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write. Document Number: 001-07970 Rev. *G Description ...
Page 7
Switching Waveforms Figure 4. Read Cycle No.1: Address Transition Controlled ADDRESS DATA OUT PREVIOUS DATA VALID Figure 5. Read Cycle No Controlled ADDRESS CE t ACE OE t LZOE BHE/BLE t LZBE HIGH IMPEDANCE DATA OUT t LZCE ...
Page 8
Switching Waveforms (continued) Figure 6. Write Cycle Controlled ADDRESS BHE/BLE OE NOTE 24 DATA I/O t HZOE ADDRESS CE WE BHE/BLE OE DATA I/O NOTE 24 t HZOE Notes 21 HIGH ...
Page 9
Switching Waveforms (continued) Figure 8. Write Cycle 3: WE controlled, OE LOW ADDRESS CE BHE/BLE DATA I/O NOTE 26 Figure 9. Write Cycle 4: BHE/BLE Controlled, OE LOW ADDRESS CE BHE/BLE NOTE 26 DATA ...
Page 10
Truth Table BHE BLE [27 [27 ...
Page 11
... Ordering Information Speed Ordering Code (ns) 45 CY62146ELL-45ZSXI CY62146ELL-45ZSXA Contact your local Cypress sales representative for availability of these parts. Ordering Code Definitions E LL 621 ZSX CY 6 Package Diagram 22 23 TOP VIEW 0.400(0.016) 0.800 BSC 0.300 (0.012) (0.0315) 18.517 (0.729) 18.313 (0.721) DIMENSION IN MM (INCH) MAX MIN ...
Page 12
... Acronyms Acronym Description CMOS complementary metal oxide semiconductor I/O input/output SRAM static random access memory TSOP thin small outline package Document Conventions Units of Measure Symbol Unit of Measure ns nano seconds V volts µA micro amperes mA milli amperes pF pico Farad °C degree Celsius W watts Document Number: 001-07970 Rev. *G ...
Page 13
Document History Page Document Title: CY62146E MoBL 4-Mbit (256K x 16) Static RAM Document Number: 001-07970 REV. ECN NO. Issue Date ** 463213 See ECN *A 684343 See ECN *B 925501 See ECN *C 1045260 See ECN *D 2073548 ...
Page 14
... Cypress against all charges. Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign), United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement ...