M29W128GSL70ZS6E NUMONYX, M29W128GSL70ZS6E Datasheet - Page 81
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M29W128GSL70ZS6E
Manufacturer Part Number
M29W128GSL70ZS6E
Description
IC FLASH 128MBIT 70NS 64FBGA
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet
1.M29W128GSL70ZS6E.pdf
(85 pages)
Specifications of M29W128GSL70ZS6E
Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
128M (16Mx8, 8Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M29W128GSL70ZS6E
Manufacturer:
ST
Quantity:
20
Company:
Part Number:
M29W128GSL70ZS6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
M29DW128G
2. A write to buffer program abort and reset must be issued to return the device in read mode.
3. When the block address is specified, any address in the selected block address space is acceptable. However when
4. DQ7 must be checked since DQ5 and DQ7 may change simultaneously.
5. If this flowchart location is reached because DQ5=’1’, then the Write to Buffer Program command failed. If this flowchart
6. See
loading write buffer address with data, all addresses must fall within the selected write buffer page.
location is reached because DQ1=’1’, then the Write to Buffer Program command aborted. In both cases, the appropriate
Reset command must be issued to return the device in read mode: a Reset command if the operation failed, a Write to
Buffer Program Abort and Reset command if the operation aborted.
Table 8: Standard
commands, for details on Write to Buffer Program command sequence.
Flowcharts
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