M29W128GSL70ZS6E NUMONYX, M29W128GSL70ZS6E Datasheet - Page 36
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M29W128GSL70ZS6E
Manufacturer Part Number
M29W128GSL70ZS6E
Description
IC FLASH 128MBIT 70NS 64FBGA
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet
1.M29W128GSL70ZS6E.pdf
(85 pages)
Specifications of M29W128GSL70ZS6E
Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
128M (16Mx8, 8Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M29W128GSL70ZS6E
Manufacturer:
ST
Quantity:
20
Company:
Part Number:
M29W128GSL70ZS6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Command interface
Table 10.
1. Only available from week 8 of 2008.
2. BAd any address in the block.
7.3
7.3.1
36/85
Enhanced
Buffered
Program
Enhanced
Buffered
Program
Confirm
Unlock
Bypass
Enhanced
Buffered
Program
Command
259
257 BAd
1
Enhanced buffered program commands
Protection commands
Blocks can be protected individually against accidental program, erase or read operations.
The device block protection scheme is shown in
Table 11: Block protection commands
The memory block and extended memory block protection is configured through the Lock
register (see
Enter Extended Memory Block command
The M29DW128G has one extra 256-word block (extended memory block) that can only be
accessed using the Enter Extended Memory Block command.
The extended memory block is divided in two memory areas of 128 words each: the first one
is factory locked and the second one is customer lockable.
Three Bus Write cycles are required to issue the Extended Memory Block command. Once
the command has been issued the device enters the extended memory block mode where
all bus read or program operations are conducted on the extended memory block. Once the
device is in the extended block mode, the extended memory block is addressed by using the
addresses occupied by the first boot block in the other operating modes (see
addresses).
The device remains in extended memory block mode until the Exit Extended Memory Block
command is issued or power is removed from the device. After power-up or hardware reset,
the device reverts to read mode where the commands issued to the first boot block address
space will address the first boot block.
The extended memory block cannot be erased, and can be treated as one-time
programmable (OTP) memory.
In extended block mode only array cell locations (bank A) with the same addresses as the
extended block are not accessible. In extended block mode dual operations are allowed and
Add
BAd
(00)
555
1st
Data Add Data Add Data Add Data
AA
29
33
2AA
BAd
(00)
Section 8.1: Lock
2nd
Data
55
BAd
3rd
33
BAd
(00)
register).
4th
Data
Bus write operations
for a summary of the block protection commands.
Add
...
(1)(2)
...
Data
...
Figure 5: Software protection
Add
BAd
(FF)
257th
Data
Data
Add
258th
Data
Add
BAd
(FF)
259th
Table 31: Block
Data
Data
scheme. See
M29DW128G
Add
260th
Data