M29W128GSL70ZS6E NUMONYX, M29W128GSL70ZS6E Datasheet - Page 61
![no-image](/images/manufacturer_photos/0/4/484/numonyx_sml.jpg)
M29W128GSL70ZS6E
Manufacturer Part Number
M29W128GSL70ZS6E
Description
IC FLASH 128MBIT 70NS 64FBGA
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet
1.M29W128GSL70ZS6E.pdf
(85 pages)
Specifications of M29W128GSL70ZS6E
Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
128M (16Mx8, 8Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M29W128GSL70ZS6E
Manufacturer:
ST
Quantity:
20
Company:
Part Number:
M29W128GSL70ZS6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
M29DW128G
Table 24.
1. Sampled only, not 100% tested.
Symbol
t
WHRL
t
t
t
t
t
t
t
t
t
t
t
VCHEL
WHWL
t
WLWH
WHDX
WHEH
DVWH
GHWL
WHGL
AVWL
WLAX
ELWL
AVAV
(1)
Write AC characteristics, write enable controlled
t
t
t
BUSY
t
t
t
WPH
t
t
t
t
t
OEH
VCS
Alt
t
WC
WP
CS
DS
DH
CH
AS
AH
Address Valid to Next Address Valid
Chip Enable Low to Write Enable Low
Write Enable Low to Write Enable High
Input Valid to Write Enable High
Write Enable High to Input Transition
Write Enable High to Chip Enable High
Write Enable High to Write Enable Low
Address Valid to Write Enable Low
Write Enable Low to Address Transition
Output Enable High to Write Enable Low
Write Enable High to Output Enable Low
Program/Erase Valid to RB Low
V
CC
High to Chip Enable Low
Parameter
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
60 ns
35
45
30
45
30
50
60
0
0
0
0
0
0
M29DW128G
DC and AC parameters
70 ns
35
45
30
45
30
50
70
0
0
0
0
0
0
80 ns
80
35
45
30
45
30
50
0
0
0
0
0
0
Unit
61/85
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
ns