CY7C1021BN-15VXE Cypress Semiconductor Corp, CY7C1021BN-15VXE Datasheet - Page 7

• Manufacturer Part Number: CY7C1021BN-15VXE
• Description: IC SRAM 1MBIT 15NS 44SOJ
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY7C1021BN-15VXE

• Memory Size: 1M (64K x 16)
• Package / Case: 44-SOJ
• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Speed: 15ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Access Time: 15 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 4.5 V
• Maximum Operating Current: 130 mA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Switching Waveforms
Notes
Document #: 001-06494 Rev. *C
9. Device is continuously selected. OE, CE, BHE, and BHE = V
10. WE is HIGH for read cycle.
11. Address valid prior to or coincident with CE transition LOW.
DATA
CURRENT
ADDRESS
BHE, BLE
SUPPLY
V
DATA OUT
CC
ADDRESS
OUT
OE
CE
HIGH IMPEDANCE
PREVIOUS DATA VALID
t
t
LZCE
PU
t
ACE
t
t
LZBE
t
DBE
LZOE
t
Figure 4. Read Cycle No. 2 (OE Controlled)
DOE
50%
t
OHA
Figure 3. Read Cycle No. 1
IL
.
t
AA
t
RC
t
RC
DATA VALID
[9, 10]
CY7C1021BN, CY7C10211BN
[10, 11]
t
HZOE
DATA VALID
t
t
HZCE
HZBE
t
PD
50%
IMPEDANCE
HIGH
Page 7 of 13
I
I
ICC
ISB
CC
SB
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