CY7C1020DV33-10ZSXI Cypress Semiconductor Corp, CY7C1020DV33-10ZSXI Datasheet

IC SRAM 512KBIT 10NS 44TSOP

CY7C1020DV33-10ZSXI

Manufacturer Part Number
CY7C1020DV33-10ZSXI
Description
IC SRAM 512KBIT 10NS 44TSOP
Manufacturer
Cypress Semiconductor Corp
Type
Asynchronousr
Datasheet

Specifications of CY7C1020DV33-10ZSXI

Memory Size
512K (32K x 16)
Package / Case
44-TSOP II
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Speed
10ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Access Time
10 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3 V
Maximum Operating Current
60 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
1
Operating Supply Voltage
3.3 V
Memory Configuration
32K X 16
Supply Voltage Range
3V To 3.6V
Memory Case Style
TSOP
No. Of Pins
44
Operating Temperature Range
-40°C To +85°C
Rohs Compliant
Yes
Density
512Kb
Access Time (max)
10ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
3.3V
Address Bus
15b
Package Type
TSOP-II
Operating Temp Range
-40C to 85C
Supply Current
60mA
Operating Supply Voltage (min)
3V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
44
Word Size
16b
Number Of Words
32K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
428-1970
CY7C1020DV33-10ZSXI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1020DV33-10ZSXI
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Notes
Cypress Semiconductor Corporation
Document #: 38-05461 Rev. *F
Features
Functional Description
The CY7C1020DV33 is a high-performance CMOS static
RAM organized as 32,768 words by 16 bits. This device has
an automatic power-down feature that significantly reduces
power consumption when deselected.
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com
2. NC pins are not connected on the die.
• Pin-and function-compatible with CY7C1020CV33
• High speed
• Low active power
• Low CMOS standby power
• 2.0V Data retention
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Independent control of upper and lower bits
• Available in Pb-free 44-pin 400-Mil wide Molded SOJ and
— t
— I
— I
44-pin TSOP II packages
Logic Block Diagram
A
A
A
A
A
A
A
A
AA
CC
SB2
5
4
3
2
1
0
7
6
= 10 ns
= 60 mA @ 10 ns
= 3 mA
DATA IN DRIVERS
COLUMN DECODER
RAM Array
32K x 16
[1]
198 Champion Court
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
written into the location specified on the address pins (A
through A
from I/O pins (I/O
specified on the address pins (A
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O
LOW, then data from memory will appear on I/O
the truth table at the back of this data sheet for a complete
description of read and write modes.
The input/output pins (I/O
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE
are disabled (BHE, BLE HIGH), or during a write operation (CE
LOW, and WE LOW).
The CY7C1020DV33 is available in Pb-free 44-pin 400-Mil
wide Molded SOJ and 44-pin TSOP II packages.
512K (32K x 16) Static RAM
I/O
I/O
14
San Jose
0
8
BHE
WE
CE
OE
BLE
). If Byte High Enable (BHE) is LOW, then data
–I/O
–I/O
7
15
8
through I/O
,
CA 95134-1709
0
to I/O
V
0
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
V
WE
A
A
A
NC
CE
NC
Pin Configuration
A
A
A
A
CC
A
SS
14
13
12
through I/O
7
3
2
1
0
0
1
2
3
4
5
6
7
4
. If Byte High Enable (BHE) is
15
0
Revised December 14, 2010
) is written into the location
through A
10
11
12
13
14
15
16
17
18
19
20
21
22
SOJ/TSOP II
1
2
3
4
5
6
7
8
9
CY7C1020DV33
Top View
15
) are placed in a
0
14
through I/O
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
).
8
408-943-2600
to I/O
[2]
A
A
BHE
BLE
I/O
I/O
V
V
I/O
I/O
I/O
A
A
A
NC
A
OE
I/O
I/O
I/O
NC
A
5
6
7
SS
CC
8
9
10
11
15
15
14
13
12
11
10
9
8
. See
7
), is
0
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Related parts for CY7C1020DV33-10ZSXI

CY7C1020DV33-10ZSXI Summary of contents

Page 1

... HIGH), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). The CY7C1020DV33 is available in Pb-free 44-pin 400-Mil wide Molded SOJ and 44-pin TSOP II packages. I/O –I/O ...

Page 2

... MAX RC 66 MHz 40 MHz Max > > < MAX Max > V – 0.3V > V – 0.3V < 0.3V CY7C1020DV33 [3] –12 (Automotive) Unit 12 ns 100 Ambient V Speed CC Temperature 3.3V  0.3V – + – +125 –12 (Automotive) Unit Max. Min. Max. 2.4 V 0.4 0 0.3 2 ...

Page 3

... Test Conditions Still Air, soldered × 4.5 inch, four-layer printed circuit board [6] 3.0V GND 30 pF* Rise Time: 1 V/ns High-Z characteristics: R 317 3.3V OUTPUT 351 (c) CY7C1020DV33 Max. Unit SOJ TSOP II Unit C/W 59.52 53.91 C/W 36.75 21.24 ALL INPUT PULSES ...

Page 4

... Write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the Write. Document #: 38-05461 Rev. *F [7] –10 (Industrial) Min. Max. 100 values until the first memory access can be performed CC is less than less than t , and t HZCE LZCE HZOE LZOE HZWE CY7C1020DV33 –12 (Automotive) Unit Min. Max. s 100 ...

Page 5

... CE > V – 0.3V > V – 0. < 0. DATA RETENTION MODE 3.0V > CDR [14, 15 OHA t RC DOE DATA VALID 50% > 50 s or stable at V > 50  CC(min.) CC(min CY7C1020DV33 Min. Max. Unit 2 Industrial 15 mA Automotive 3. DATA VALID t HZOE t HZCE t HZBE HIGH IMPEDANCE 50 Page [+] Feedback ...

Page 6

... Write Cycle No. 2 (BLE or BHE Controlled) ADDRESS t SA BHE, BLE WE CE DATA I/O Notes: 17. Data I/O is high impedance BHE and/or BLE = V 18 goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state. Document #: 38-05461 Rev SCE PWE PWE t SCE CY7C1020DV33 Page [+] Feedback ...

Page 7

... Read—All bits High-Z Read—Lower bits only Data Out Read—Upper bits only Data In Write—All bits High-Z Write—Lower bits only Data In Write—Upper bits only High-Z Selected, Outputs Disabled High-Z Selected, Outputs Disabled CY7C1020DV33 LZWE Mode Power Standby ( Active ( ...

Page 8

... Ordering Information Speed Ordering Code (ns) 10 CY7C1020DV33-10VXI CY7C1020DV33-10ZSXI 12 CY7C1020DV33-12ZSXE Ordering Code Definitions V33 - XX XX Shaded areas contain advance information. Please contact your local Cypress sales representative for availability of these parts. Document #: 38-05461 Rev. *F Package Package Type Name 51-85082 44-pin (400-Mil) Molded SOJ (Pb-free) ...

Page 9

... Package Diagrams Figure 1. 44-pin (400-Mil) Molded SOJ (51-85082) Document #: 38-05461 Rev. *F CY7C1020DV33 51-85082 *C Page [+] Feedback ...

Page 10

... Package Diagrams (continued) Figure 2. 44-Pin Thin Small Outline Package Type II (51-85087) All product and company names mentioned in this document may be the trademarks of their respective holders. Document #: 38-05461 Rev. *F CY7C1020DV33 51-85087 *C Page [+] Feedback ...

Page 11

... Document History Page Document Title: CY7C1020DV33, 512K (32K x 16) Static RAM Document Number: 38-05461 REV. ECN NO. Issue Date ** 201560 See ECN *A 233695 See ECN *B 262950 See ECN *C 307596 See ECN *D 560995 See ECN *E 2898399 03/24/2010 *F 3109992 12/14/2010 Document #: 38-05461 Rev. *F Orig. of ...

Page 12

... The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. cypress.com/go/plc CY7C1020DV33 PSoC Solutions psoc.cypress.com/solutions ...

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