CY7C109D-10VXI Cypress Semiconductor Corp, CY7C109D-10VXI Datasheet - Page 3

• Manufacturer Part Number: CY7C109D-10VXI
• Description: IC SRAM 1MBIT 10NS 32SOJ
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY7C109D-10VXI

• Memory Size: 1M (128K x 8)
• Package / Case: 32-SOJ
• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 10 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 4.5 V
• Maximum Operating Current: 80 mA
• Organization: 128 K x 8
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 5 V
• Density: 1Mb
• Access Time (max): 10ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 5V
• Address Bus: 17b
• Package Type: SOJ
• Operating Temp Range: -40C to 85C
• Supply Current: 80mA
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 32
• Word Size: 8b
• Number Of Words: 128K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-2010-5

Maximum Ratings
Exceeding the maximum ratings may impair the useful life of
the device. These user guidelines are not tested.
Storage Temperature ................................. –65C to +150C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
DC Voltage Applied to Outputs
in High-Z State
Electrical Characteristics
Note
Document #: 38-05468 Rev. *F
V
V
V
V
I
I
I
I
I
Parameter
3. V
IX
OZ
CC
SB1
SB2
OH
OL
IH
IL
IL
(min) = –2.0V and V
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
V
Automatic CE Power-Down
Current—TTL Inputs
Automatic CE Power-Down
Current—CMOS Inputs
CC
[3]
Operating Supply Current V
...................................–0.5V to V
CC
IH
(max) = V
Description
to Relative GND
CC
+ 1V for pulse durations of less than 5 ns.
[3]
(Over the Operating Range)
[3]
... –0.5V to +6.0V
I
I
GND < V
GND < V
I
f = f
Max V
CE
V
Max V
CE
V
OH
OL
OUT
CC
IN
IN
1
1
= 8.0 mA
= –4.0 mA
max
> V
> V
= Max,
> V
> V
= 0 mA,
CC
CC
CC
IH
CC
= 1/t
IH
CC
+ 0.5V
,
,
I
I
or V
< V
< V
or CE
– 0.3V, or V
– 0.3V, or CE
RC
Test Conditions
CC
CC
IN
, Output Disabled
2
< V
< V
IL
DC Input Voltage
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage........................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current .................................................... > 200 mA
Operating Range
, f = f
IL
IN
Industrial
,
Range
2
< 0.3V, f = 0
max
< 0.3V,
100 MHz
–40 C to +85 C
83 MHz
66 MHz
40 MHz
Temperature
[3]
Ambient
............................... –0.5V to V
–0.5
Min
2.4
2.2
–1
–1
7C1009D-10
7C109D-10
5V  0.5V
V
CY7C1009D
CC
V
CY7C109D
CC
Max
0.4
0.8
+1
+1
80
72
58
37
10
3
+ 0.5
Page 3 of 12
CC
Speed
10 ns
+ 0.5V
Unit
mA
mA
mA
mA
mA
mA
A
A
V
V
V
V
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