IS43R16160B-5TL ISSI, Integrated Silicon Solution Inc, IS43R16160B-5TL Datasheet - Page 9

• Manufacturer Part Number: IS43R16160B-5TL
• Description: IC DDR SDRAM 256MBIT 66TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS43R16160B-5TL

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOPII
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 700ps
• Maximum Clock Rate: 200MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Data Bus Width: 16 bit
• Maximum Clock Frequency: 200 MHz
• Access Time: 0.7 ns
• Supply Voltage (max): 2.7 V
• Supply Voltage (min): 2.3 V
• Maximum Operating Current: 290 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant
• Other names: 706-1085; IS43R16160B-5TL

IS43R83200B
IS43R16160B, IC43R16160B
FUNCTION TRUTH TABLE
Integrated Silicon Solution, Inc.
DDR SDRAM (Rev.1.1)
Rev. B
10/31/08
ROW ACTIVE H
READ(Auto-
Current State
Precharge
Disabled)
IDLE
/CS /RAS /CAS /WE Address
H
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
X
H
H
H
X
H
H
H
H
X
H
H
H
H
L
L
L
L
L
L
L
L
L
L
L
L
Preliminary
Preliminary
H
H
X
H
H
H
H
X
H
H
H
H
X
H
H
L
L
L
L
L
L
L
L
L
L
L
H BA, RA
H X
X X
H X
L BA
X BA, CA, A10
H BA, RA
L BA, A10
H X
L
X X
H X
L BA
H BA, CA, A10
L BA, CA, A10
H BA, RA
L BA, A10
H X
L
X X
H X
L BA
H BA, CA, A10
L BA, CA, A10
L BA, A10
L
Op-Code, Mode-
Add
Op-Code, Mode-
Add
Op-Code, Mode-
Add
NOP
TERM
READ / READA
WRITE / WRITEA
ACT
PRE / PREA
REFA
MRS
Command
DESEL
NOP
TERM
READ / WRITE
ACT
PRE / PREA
REFA
MRS
DESEL
NOP
TERM
READ / READA
WRITE / WRITEA
ACT
PRE / PREA
REFA
MRS
DESEL
256M Double Data Rate Synchronous DRAM
ILLEGAL
ILLEGAL
NOP (Continue Burst to END)
NOP (Continue Burst to END)
Terminate Burst
Terminate Burst, Latch CA, Begin
New Read, Determine Auto-
Precharge
ILLEGAL
Bank Active / ILLEGAL
Terminate Burst, Precharge
ILLEGAL
ILLEGAL
Action
NOP
NOP
ILLEGAL
ILLEGAL
Bank Active, Latch RA
NOP
Auto-Refresh
Mode Register Set
NOP
NOP
ILLEGAL
Begin Read, Latch CA, Determine
Auto-Precharge
Begin Write, Latch CA, Determine
Auto-Precharge
Bank Active / ILLEGAL
Precharge / Precharge All
Zentel Electronics Corporation
A3S56D30/40ETP
Notes
2
2
4
5
5
2
3
2
9