IS43R16160B-5TL ISSI, Integrated Silicon Solution Inc, IS43R16160B-5TL Datasheet - Page 18

IC DDR SDRAM 256MBIT 66TSOP

IS43R16160B-5TL

Manufacturer Part Number
IS43R16160B-5TL
Description
IC DDR SDRAM 256MBIT 66TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheets

Specifications of IS43R16160B-5TL

Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
256M (16Mx16)
Speed
200MHz
Interface
Parallel
Voltage - Supply
2.5 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOPII
Organization
16Mx16
Density
256Mb
Address Bus
15b
Access Time (max)
700ps
Maximum Clock Rate
200MHz
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Data Bus Width
16 bit
Maximum Clock Frequency
200 MHz
Access Time
0.7 ns
Supply Voltage (max)
2.7 V
Supply Voltage (min)
2.3 V
Maximum Operating Current
290 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant
Other names
706-1085
IS43R16160B-5TL

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS43R16160B-5TLI
Manufacturer:
TI
Quantity:
157
Part Number:
IS43R16160B-5TLI
Manufacturer:
ISSI
Quantity:
20 000
IS43R83200B
IS43R16160B, IC43R16160B
18
ABSOLUTE MAXIMUM RATINGS
DC OPERATING CONDITIONS
CAPACITANCE
(Ta=0 ~ 70
Supply Voltage
Supply Voltage for Output
High-Level Input Voltage
Low-Level Input Voltage
Input Leakage Current
Any input 0V<VIN<VDD
(All other pins not under test = 0V)
Output Leakage Current:DQ are
disabled:0V<Vout<VddQ
Output Levels:
Output high Voltage (Iout=-4mA)
Output Low Voltage(Iout=4mA)
(Ta=0 ~ 70
Symbol
Symbol
CI(A)
CI(C)
CI(K)
VddQ
CI/O
Topr
Vdd
Tstg
VO
VI
IO
Pd
o
C, Vdd = VddQ = 2.5V + 0.2V Vss = VssQ = 0V, unless otherwise noted)
o
C, unless otherwise noted)
I/O Capacitance, I/O, DQS, DM pin
Input Capacitance, address pin
Input Capacitance, control pin
Input Capacitance, CLK pin
Parameter
Supply Voltage for Output
Operating Temperature
Storage Temperature
Power Dissipation
Supply Voltage
Output Voltage
Output Current
Input Voltage
Parameter
Parameter
Vref+0.15
Min.
-0.3
2.3
2.3
2.4
-2
-5
VI=1.25v
f=100MHz
VI=25mVrms
Test Condition
Commercial Temperature
Industrial Temperature
with respect to Vss
with respect to Vss
with respect to Vss
with respect to Vss
Ta = 25
Conditions
Limits
Typ.
2.5
2.5
Min. Max.
o
1.3
1.3
1.3
C
2
Limits
Vref-0.15
Vdd+0.3
Max.
Q
Q
2.7
2.7
0.4
2.5
2.5
2
5
2.5
4
Integrated Silicon Solution, Inc.
Cap.(Max.)
Unit
uA
uA
Delta
0.75
V
V
V
V
V
V
0.25
-0.5 ~ V
1.3
-0.5 ~ V
-0.5 ~ 3.7
-0.5 ~ 3.7
-40 to +85
-65 ~ 150
-5, -6, -75
-5, -6, -75
Ratings
Not es
0 to 70
1500
50
DDQ
DD
Unit
pF
pF
pF
pF
+0.5
+0.5
Notes
10/31/08
Unit
mW
Rev. B
mA
o
o
o
V
V
V
V
C
C
C

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