IS61WV12816EDBLL-10TLI ISSI, IS61WV12816EDBLL-10TLI Datasheet

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IS61WV12816EDBLL-10TLI

Manufacturer Part Number
IS61WV12816EDBLL-10TLI
Description
SRAM 2Mb (128K x 16) 10ns 2.4V-3.6V
Manufacturer
ISSI
Datasheet

Specifications of IS61WV12816EDBLL-10TLI

Rohs
yes
Memory Size
2 Mbit
Organization
128 Kbit x 16
Access Time
10 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.4 V
Maximum Operating Current
35 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TSOP-44
Memory Type
Asynchronous CMOS
Factory Pack Quantity
135
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
09/29/2011
IS61WV12816EDBLL
IS64WV12816EDBLL
Copyright © 2011 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-
est version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
FUNCTIONAL BLOCK DIAGRAM
128K x 16 HIGH SPEED ASYNCHRONOUS
CMOS STATIC RAM WITH ECC
FEATURES
• High-speed access time: 8, 10 ns
• Low Active Power: 85 mW (typical)
• Low Standby Power: 7 mW (typical)
• Single power supply
— V
• Fully static operation: no clock or refresh
• Three state outputs
• Data control for upper and lower bytes
• Industrial and Automotive temperature support
• Lead-free available
• Error Detection and Error Correction
CMOS standby
— V
required
dd
dd
2.4V to 3.6V (10 ns)
3.3V ± 10% (8 ns)
IO0-7
IO8-15
A0-A16
/CE
/OE
/WE
/UB
/LB
8
8
Decoder
I/O Data
Control
Circuit
Circuit
8
8
ECC
ECC
12
12
DESCRIPTION
The
CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields high-
performance and low power consumption devices.
When CE is HIGH (deselected), the device assumes a
and Output Enable inputs, CE and OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
The IS61/64WV12816EDBLL is packaged in the JEDEC
standard 44-pin TSOP-II and 48-pin Mini BGA (6mm x
8mm).
2,097,152-bit static RAMs organized as 131,072 words
by 16 bits. It is fabricated using
standby mode at which the power dissipation can be re-
duced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
Lower IO
Memory
8
128Kx8
Array-
ISSI
IS61/64WV12816EDBLL is a high-speed,
4
Array-
128K
ECC
Column I/O
x4
Memory
8
Upper IO
128Kx8
Array-
OCTOBER 2011
ISSI
4
Array-
128K
ECC
x4
's high-performance
1

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IS61WV12816EDBLL-10TLI Summary of contents

Page 1

... IS61WV12816EDBLL IS64WV12816EDBLL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC FEATURES • High-speed access time • Low Active Power (typical) • Low Standby Power (typical) CMOS standby • Single power supply — V 2.4V to 3.6V (10 ns) dd — V 3.3V ± 10% (8 ns) dd • Fully static operation: no clock or refresh required • Three state outputs • ...

Page 2

... I/O13 35 I/O12 GND GND I/O11 31 I/O10 30 I/ A10 24 A11 23 NC Integrated Silicon Solution, Inc. — www.issi.com I/O PIN I/O8-I/O15 V Current DD High High High-Z High out d out High-Z I Address Inputs ...

Page 3

... I I GND NC A7 I/O I I/O NC A16 I I/O A14 I/O I/O A15 A12 I/O NC A13 A10 A9 A11 Integrated Silicon Solution, Inc. — www.issi.com Rev. A 09/29/2011 6 PIN DESCRIPTIONS A0-A16 I/O0-I/O15 GND I/O GND Address Inputs ...

Page 4

... Note: 1. Contact SRAM@issi.com for 1.8V option 4 (1) Value –0 0.5 dd –0.3 to 4.0 –65 to +150 1.0 Conditions Max out = 3.3V. dd IS61WV12816EDBLL V (8, 10n ) DD S 2.4V-3.6V (10ns) 3.3V ± 10% (8ns) — — Integrated Silicon Solution, Inc. — www.issi.com Unit V V °C W Unit IS64WV12816EDBLL ...

Page 5

... Current (CMOS Inputs) CE ≥ V ≥ ≤ 0. Note address and data inputs are cycling at the maximum frequency means no input lines change. maX 2. Typical values are measured 3.0V Integrated Silicon Solution, Inc. — www.issi.com Rev. A 09/29/2011 (Over Operating Range) Test Conditions V = Min –4 Min 8 ≤ V GND ≤ V ...

Page 6

... Integrated Silicon Solution, Inc. — www.issi.com 319 Ω 3.3V 353 Ω Including jig and scope figure 2. -20 Min. Max. Unit 20 — ns — 2.5 — ...

Page 7

... ADDRESS LZCE LB LZB HIGH-Z D OUT V DD Supply Current Notes HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE, UB Address is valid prior to or coincident with CE LOW transition. Integrated Silicon Solution, Inc. — www.issi.com Rev. A 09/29/2011 , OHA DOE t LZOE ...

Page 8

... Integrated Silicon Solution, Inc. — www.issi.com -20 Max. Unit 20 — — — — — — — — — ...

Page 9

... WRITE = (CE) (LB) = (UB) (WE). WRITE CYCLE NO. 2 (WE Controlled HIGH During Write Cycle) ADDRESS OE CE LOW UB DATA UNDEFINED OUT D IN Integrated Silicon Solution, Inc. — www.issi.com Rev. A 09/29/2011 ( VALID ADDRESS t t SCE PWE1 t PWE2 t PWB t t HZWE ...

Page 10

... WC WC ADDRESS 1 ADDRESS PWB PWB WORD 1 WORD 2 HIGH DATA IN DATA VALID VALID Integrated Silicon Solution, Inc. — www.issi.com ( LZWE t HD UB_CEWR3.eps LZWE UB_CEWR4.eps and timing is referenced 09/29/2011 Rev ...

Page 11

... Data Retention Setup Time See Data Retention Waveform sdr t Recovery Time rdr Note 1: Typical values are measured DATA RETENTION WAVEfORM t SDR GND Integrated Silicon Solution, Inc. — www.issi.com Rev. A 09/29/2011 (2.4V-3.6V) Test Condition Options See Data Retention Waveform V = 2.0V, CE ≥ V – 0.2V Com Ind. Auto. See Data Retention Waveform (min and not 100% tested (CE Controlled) Data Retention Mode CE ≥ ...

Page 12

... Industrial Range: -40°C to +85°C Speed (ns) Order Part No. 8 IS61WV12816EDBLL-8BI IS61WV12816EDBLL-8BLI IS61WV12816EDBLL-8TI IS61WV12816EDBLL-8TLI 10 IS61WV12816EDBLL-10BI IS61WV12816EDBLL-10BLI IS61WV12816EDBLL-10TI IS61WV12816EDBLL-10TLI Industrial Range: -40°C to +85°C Speed (ns) Order Part No. 10 IS64WV12816EDBLL-10BA1 IS64WV12816EDBLL-10BLA1 IS64WV12816EDBLL-10CTA1 IS64WV12816EDBLL-10CTLA1 TSOP (Type II), Lead-free, Copper Leadframe Automotive Range: -40°C to +125°C Speed (ns) Order Part No. 10 IS64WV12816EDBLL-10BA3 IS64WV12816EDBLL-10BLA3 ...

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... IS61/64WV12816EDBLL Integrated Silicon Solution, Inc. — www.issi.com Rev. A 09/29/2011 ...

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... IS61/64WV12816EDBLL 14 Integrated Silicon Solution, Inc. — www.issi.com Rev. A 09/29/2011 ...

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