CY7C1021D-10ZSXAT Cypress Semiconductor, CY7C1021D-10ZSXAT Datasheet - Page 7

• Manufacturer Part Number: CY7C1021D-10ZSXAT
• Description: SRAM 1-Mbit 64k x16 Static RAM
• Manufacturer: Cypress Semiconductor

Specifications of CY7C1021D-10ZSXAT

• Rohs: yes
• Memory Size: 1 Mbit
• Organization: 64 K x 16
• Access Time: 10 ns
• Supply Voltage - Max: 5.5 V
• Supply Voltage - Min: 4.5 V
• Maximum Operating Current: 80 mA
• Mounting Style: SMD/SMT
• Package / Case: TSOP-44
• Memory Type: Asynchronous CMOS
• Factory Pack Quantity: 1000

Data Retention Characteristics
Over the Operating Range
Data Retention Waveform
Switching Waveforms
Document Number: 38-05462 Rev. *K
Notes
V
I
t
t
CCDR
CDR
R
10. V
11. Full device operation requires linear V
12. Device is continuously selected. OE, CE, BHE and/or BLE = V
13. WE is HIGH for read cycle.
Parameter
DR
[11]
DATA OUT
ADDRESS
IL
[10]
(min) = –2.0 V and V
V
CE
CC
V
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
CC
for Data Retention
IH
(max) = V
PREVIOUS DATA VALID
Figure 3. Read Cycle No. 1 (Address Transition Controlled)
Description
CC
+ 1 V for pulse durations of less than 5 ns.
CC
ramp from V
t
OHA
t
CDR
4.5 V
DR
to V
t
IL
AA
CC(min)
.
V
V
> 50 s or stable at V
IN
CC
> V
DATA RETENTION MODE
= V
CC
DR
– 0.3 V or V
t
RC
RC
= 2.0 V, CE > V
V
DR
Conditions
>
2 V
CC(min)
IN
< 0.3 V
> 50 s.
CC
– 0.3 V,
[12, 13]
DATA VALID
4.5 V
t
R
Min
2.0
t
RC
–
0
CY7C1021D
Max
–
3
–
–
Page 7 of 16
Unit
mA
ns
ns
V