CY7C1021D-10ZSXAT Cypress Semiconductor, CY7C1021D-10ZSXAT Datasheet - Page 5

• Manufacturer Part Number: CY7C1021D-10ZSXAT
• Description: SRAM 1-Mbit 64k x16 Static RAM
• Manufacturer: Cypress Semiconductor

Specifications of CY7C1021D-10ZSXAT

• Rohs: yes
• Memory Size: 1 Mbit
• Organization: 64 K x 16
• Access Time: 10 ns
• Supply Voltage - Max: 5.5 V
• Supply Voltage - Min: 4.5 V
• Maximum Operating Current: 80 mA
• Mounting Style: SMD/SMT
• Package / Case: TSOP-44
• Memory Type: Asynchronous CMOS
• Factory Pack Quantity: 1000

Capacitance
Thermal Resistance
AC Test Loads and Waveforms
Document Number: 38-05462 Rev. *K
C
C


Notes
Parameter
Parameter
3. Tested initially and after any design or process changes that may affect these parameters.
4. AC characteristics (except High Z) are tested using the load conditions shown in
IN
OUT
JA
JC
shown in
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
Figure 2
OUTPUT
[3]
[3]
Input capacitance
Output capacitance
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
(c).
Description
Description
Z = 50 
(a)
1.5 V
50 
Figure 2. AC Test Loads and Waveforms
High-Z characteristics:
T
Still Air, soldered on a 3 × 4.5 inch, four-layer
printed circuit board
INCLUDING
JIG AND
SCOPE
A
OUTPUT
= 25C, f = 1 MHz, V
30 pF*
5 V
Test Conditions
5 pF
(c)
Figure 2
GND
3.0 V
R1 480
Test Conditions
Rise Time:
CC
= 5.0 V
(a). High Z characteristics are tested for all speeds using the test load
255
3 ns
R2
10%
[4]
90%
ALL INPUT PULSES
44-pin SOJ
(b)
59.52
36.75
44-pin TSOP II Unit
Fall Time:
90%
CY7C1021D
53.91
21.24
10%
Max
8
8
3 ns
Page 5 of 16
C/W
C/W
Unit
pF
pF