IS61WV5128BLL-10TLI ISSI, Integrated Silicon Solution Inc, IS61WV5128BLL-10TLI Datasheet - Page 16
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IS61WV5128BLL-10TLI
Manufacturer Part Number
IS61WV5128BLL-10TLI
Description
IC SRAM 4MBIT 10NS 44TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
Asynchronousr
Datasheet
1.IS61WV5128BLL-10TLI.pdf
(25 pages)
Specifications of IS61WV5128BLL-10TLI
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
4M (512K x 8)
Speed
10ns
Interface
Parallel
Voltage - Supply
1.65 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
44-TSOP II
Access Time
10 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.4 V
Maximum Operating Current
40 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
1
Operating Supply Voltage
2.5 V, 3.3 V
Density
4Mb
Access Time (max)
10ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
2.5/3.3V
Address Bus
19b
Package Type
TSOP-II
Operating Temp Range
-40C to 85C
Supply Current
40mA
Operating Supply Voltage (min)
2.4V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
44
Word Size
8b
Number Of Words
512K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
706-1108
IS61WV5128BLL-10TLI
Q4714568
IS61WV5128BLL-10TLI
Q4714568
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS61WV5128BLL-10TLI
Manufacturer:
ISSI
Quantity:
675
Company:
Part Number:
IS61WV5128BLL-10TLI
Manufacturer:
PANASONIC
Quantity:
2 606
Part Number:
IS61WV5128BLL-10TLI
Manufacturer:
ISSI
Quantity:
20 000
IS61WV5128ALL/ALS, IS61WV5128BLL/BLS
IS64WV5128BLL/BLS
HIGH SPEED (IS61WV5128ALL/BLL)
DATA RETENTION SWITCHING CHARACTERISTICS
Note 1:
DATA RETENTION SWITCHING CHARACTERISTICS
Note 1:
16
DATA RETENTION WAVEFORM
Symbol
V
I
t
t
Symbol
V
I
t
t
dr
dr
sdr
rdr
sdr
rdr
dr
dr
Typical values are measured at V
Typical values are measured at V
GND
Parameter
V
Data Retention Current
Data Retention Setup Time
Recovery Time
Parameter
V
Data Retention Current
Data Retention Setup Time
Recovery Time
CE
dd
dd
V
V
DD
DR
for Data Retention
for Data Retention
dd
dd
= 3.0V, T
= 1.8V, T
t
SDR
Test Condition
See Data Retention Waveform
V
See Data Retention Waveform
See Data Retention Waveform
Test Condition
See Data Retention Waveform
V
See Data Retention Waveform
See Data Retention Waveform
A
A
dd
dd
= 25
= 25
(CE Controlled)
= 2.0V, CE ≥ V
= 1.2V, CE ≥ V
o
o
C and not 100% tested.
C and not 100% tested.
dd
dd
Data Retention Mode
CE ≥ V
– 0.2V
– 0.2V
DD
- 0.2V
Integrated Silicon Solution, Inc. — www.issi.com
(2.4V-3.6V)
(1.65V-2.2V)
Options
Options
Com.
Com.
Auto.
Ind.
Ind.
Min.
Min.
2.0
t
1.2
t
—
—
—
—
rC
rC
0
0
t
RDR
Typ.
Typ.
—
—
—
—
—
—
—
—
2
2
(1)
(1)
Max.
Max.
3.6
3.6
15
—
—
—
—
6
8
6
8
Unit
Unit
mA
mA
ns
ns
ns
ns
V
V
08/10/09
Rev. I