IS61C6416AL-12KLI ISSI, Integrated Silicon Solution Inc, IS61C6416AL-12KLI Datasheet - Page 4

• Manufacturer Part Number: IS61C6416AL-12KLI
• Description: IC SRAM 1MBIT 12NS 44SOJ
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61C6416AL-12KLI

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (64K x 16)
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-SOJ
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 706-1088-5; IS61C6416AL-12KLI

IS61C6416AL
IS62C6416AL
CAPACITANCE
DC ELECTRICAL CHARACTERISTICS
4
Symbol
C
C
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
Symbol Parameter
V
V
V
V
I
I
Note:
1. V
LO
LI
OH
OL
IN
OUT
IH
IL
IL
= –3.0V for pulse width less than 10 ns.
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Parameter
Input Capacitance
Output Capacitance
(1,2)
A
= 25°C, f = 1 MHz, V
IS64C6416AL
IS65C6416AL
(1)
Test Conditions
V
V
GND V
Outputs Disabled
GND V
DD
DD
DD
= Min., I
= Min., I
= 5.0V.
Integrated Silicon Solution, Inc. — www.issi.com —
OUT
IN
(Over Operating Range)
Conditions
V
V
OH
OL
V
OUT
IN
DD
V
= 8.0 mA
= –4.0 mA
DD
= 0V
= 0V
Max.
5
7
Com.
Auto.
Com.
Auto.
Ind.
Ind.
Unit
pF
pF
Min.
–0.3
2.4
2.2
–1
–2
–5
–1
–2
–5
—
V
DD
Max.
0.4
0.8
—
ISSI
1
2
5
1
2
5
+ 0.5
1-800-379-4774
Unit
06/08/05
µA
µA
V
V
V
V
Rev. B
®