IS61C6416AL-12KLI ISSI, Integrated Silicon Solution Inc, IS61C6416AL-12KLI Datasheet - Page 10

IC SRAM 1MBIT 12NS 44SOJ

IS61C6416AL-12KLI

Manufacturer Part Number
IS61C6416AL-12KLI
Description
IC SRAM 1MBIT 12NS 44SOJ
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS61C6416AL-12KLI

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
1M (64K x 16)
Speed
12ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
44-SOJ
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
706-1088-5
IS61C6416AL-12KLI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS61C6416AL-12KLI
Manufacturer:
ISSI
Quantity:
1 600
Company:
Part Number:
IS61C6416AL-12KLI
Quantity:
96
IS61C6416AL
IS62C6416AL
WRITE CYCLE NO. 3
Notes:
1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write,
2. I/O will assume the High-Z state if OE V
10
WRITE CYCLE NO. 2
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the Write.
ADDRESS
ADDRESS
UB, LB
UB, LB
D
D
OUT
WE
D
OE
CE
OUT
WE
D
OE
CE
IN
IN
LOW
LOW
LOW
IS64C6416AL
IS65C6416AL
(OE is LOW During Write Cycle)
(OE is HIGH During Write Cycle)
t
SA
t
DATA UNDEFINED
SA
DATA UNDEFINED
IH
.
Integrated Silicon Solution, Inc. — www.issi.com —
VALID ADDRESS
t
t
t
t
AW
HZWE
AW
HZWE
VALID ADDRESS
t
t
PWE1
WC
t
t
PWE2
t
WC
t
PBW
PBW
(1)
(1,2)
HIGH-Z
HIGH-Z
t
t
SD
SD
DATA
DATA
IN
IN
VALID
VALID
t
t
HD
HD
t
t
LZWE
LZWE
t
t
HA
HA
UB_CEWR2.eps
UB_CEWR3.eps
ISSI
1-800-379-4774
06/08/05
Rev. B
®

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