IS61LV6416-10TL ISSI, Integrated Silicon Solution Inc, IS61LV6416-10TL Datasheet - Page 9

• Manufacturer Part Number: IS61LV6416-10TL
• Description: IC SRAM 1MBIT 10NS 44TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: Asynchronousr

Specifications of IS61LV6416-10TL

• Memory Size: 1M (64K x 16)
• Package / Case: 44-TSOP II
• Interface: Parallel
• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Speed: 10ns
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Access Time: 10 ns
• Supply Voltage (max): 3.63 V
• Supply Voltage (min): 3.135 V
• Maximum Operating Current: 120 mA
• Organization: 64 K x 16
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 3.3 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 706-1039

IS61LV6416
IS61LV6416L
Integrated Silicon Solution, Inc.
Rev. I
11/22/05
WRITE CYCLE NO. 2
WRITE CYCLE NO. 3
ADDRESS
ADDRESS
UB, LB
UB, LB
D
D
OUT
WE
D
OUT
OE
CE
WE
D
OE
CE
IN
IN
LOW
LOW
LOW
t
SA
(1)
t
(WE Controlled: OE is LOW During Write Cycle)
DATA UNDEFINED
DATA UNDEFINED
SA
(WE Controlled, OE = HIGH during Write Cycle)
VALID ADDRESS
t
t
t
t
AW
HZWE
AW
HZWE
VALID ADDRESS
t
t
PWE1
WC
t
t
PWE2
t
WC
t
PBW
PBW
HIGH-Z
HIGH-Z
t
t
SD
SD
DATA
DATA
IN
IN
VALID
VALID
t
t
HD
HD
t
t
LZWE
LZWE
t
t
HA
HA
UB_CEWR3.eps
UB_CEWR2.eps
ISSI
9
®
1
2
3
4
5
6
7
8
9
10
11
12