MT46H32M16LFBF-6 L IT:B Micron, MT46H32M16LFBF-6 L IT:B Datasheet - Page 85
![no-image](/images/no-image-200.jpg)
MT46H32M16LFBF-6 L IT:B
Manufacturer Part Number
MT46H32M16LFBF-6 L IT:B
Description
Manufacturer
Micron
Datasheet
1.MT46H32M16LFBF-6LITB.pdf
(98 pages)
- Current page: 85 of 98
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Figure 45: Bank Read – With Auto Precharge
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
Case 1:
Case 2:
Command
BA0, BA1
Address
DQ
DQ
DQS
DQS
t
t
CK#
CKE
A10
DM
AC (MIN) and
AC (MAX) and
CK
4,5
4,5
4
4
t
t
IS
IS
NOP
T0
t
DQSCK (MIN)
t
t
DQSCK (MAX)
1
t
IH
IH
Notes:
Bank x
ACTIVE
t
t
IS
IS
Row
Row
T1
1. NOP commands are shown for ease of illustration; other commands may be valid at
2. BL = 4 in the case shown.
3. Enable auto precharge.
4. Refer to Figure 30 (page 68) and Figure 31 (page 69) for detailed DQS and DQ timing.
5. D
t
t
IH
IH
t
CK
these times.
OUT
t
t
RAS
RCD
t
RC
n = data-out from column n.
NOP
T2
1
t
CH
t
CL
t
t
Note 3
Bank x
READ
IS
LZ (MIN)
Col n
T3
t
2
IH
85
t
CL = 2
RPRE
t
t
LZ (MIN)
AC (MIN)
512Mb: x16, x32 Mobile LPDDR SDRAM
NOP
T4
1
t
AC (MAX)
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
D
RPRE
OUT
t
DQSCK (MIN)
NOP
D
T5
D
OUT
OUT
t
DQSCK (MAX)
1
T5n
D
D
OUT
OUT
t
RP
NOP
D
T6
t
OUT
D
RPST
OUT
1
Don’t Care
© 2004 Micron Technology, Inc. All rights reserved.
t
T6n
HZ (MAX)
D
t
RPST
OUT
Auto Precharge
NOP
T7
1
Transitioning Data
ACTIVE
Bank x
Row
Row
T8
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