MT47H64M16HR-25E AIT:H Micron, MT47H64M16HR-25E AIT:H Datasheet - Page 24

• Manufacturer Part Number: MT47H64M16HR-25E AIT:H
• Description: Ic Ddr2 Sdram 1gbit 84fbga
• Manufacturer: Micron

Table 10: DDR2 I
Notes: 1–7 apply to the entire table
PDF: 09005aef840eff89
1gbddr2_ait_aat.pdf – Rev. C 7/11 EN
Parameter/Condition
Operating one bank active-
precharge current:
t
tween valid commands; Address bus inputs are
switching; Data bus inputs are switching
Operating one bank active-read-precharge cur-
rent: I
t
=
commands; Address bus inputs are switching; Data
pattern is same as I
Precharge power-down current: All banks idle;
t
dress bus inputs are stable; Data bus inputs are
floating
Precharge quiet standby
current: All banks idle;
CS# is HIGH; Other control and address bus inputs
are stable; Data bus inputs are floating
Precharge standby current: All banks idle;
t
trol and address bus inputs are switching; Data bus
inputs are switching
Active power-down current: All banks open;
t
dress bus inputs are stable; Data bus inputs are
floating
Active standby current: All banks open;
t
t
valid commands; Other control and address bus in-
puts are switching; Data bus inputs are switching
Operating burst write current: All banks open,
continuous burst writes; BL = 4, CL = CL (I
t
(I
mands; Address bus inputs are switching; Data bus
inputs are switching
RAS =
CK (I
CK =
CK =
CK =
CK =
RP =
CK =
DD
t
RCD (I
); CKE is HIGH, CS# is HIGH between valid com-
DD
t
t
t
t
t
t
RP (I
OUT
CK (I
CK (I
CK (I
CK (I
CK (I
t
),
RAS MIN (I
DD
t
RC =
= 0mA; BL = 4, CL = CL (I
DD
); CKE is HIGH, CS# is HIGH between valid
DD
DD
DD
DD
DD
); CKE is HIGH, CS# is HIGH between
); CKE is LOW; Other control and ad-
); CKE is HIGH, CS# is HIGH; Other con-
); CKE is LOW; Other control and ad-
),
),
t
t
t
RC (I
RAS =
RAS =
DD
DD4W
DD
DD
); CKE is HIGH, CS# is HIGH be-
t
CK =
t
t
),
Specifications and Conditions (Die Revision H)
RAS MAX (I
RAS MAX (I
t
t
CK =
RAS =
t
CK (I
t
CK (I
t
DD
RAS MIN (I
DD
DD
DD
),
DD
t
),
),
), AL = 0;
RC =
); CKE is HIGH,
t
RP =
DD
t
RC (I
DD
), AL = 0;
t
RP
),
t
CK =
t
DD
RCD
),
Symbol
I
I
I
I
I
I
I
DD4W
DD3Pf
DD3Ps
I
I
DD2Q
DD2N
DD3N
DD2P
DD0
DD1
24
Electrical Specifications – I
1Gb: x8, x16 Automotive DDR2 SDRAM
Configuration
Micron Technology, Inc. reserves the right to change products or specifications without notice.
MR12 = 0
MR12 = 1
Slow exit
Fast exit
x8, x16
x16
x16
x16
x16
x16
x16
x8
x8
x8
x8
x8
x8
-25E/
-25
125
160
65
80
75
95
24
26
28
30
20
10
33
35
7
2010 Micron Technology, Inc. All rights reserved.
DD
-3E/
115
135
60
75
70
90
24
26
24
26
15
10
30
32
-3
7
Parameters
Units
mA
mA
mA
mA
mA
mA
mA
mA