MT47H64M16HR-25E AIT:H Micron, MT47H64M16HR-25E AIT:H Datasheet - Page 21

• Manufacturer Part Number: MT47H64M16HR-25E AIT:H
• Description: Ic Ddr2 Sdram 1gbit 84fbga
• Manufacturer: Micron

Table 6: Temperature Limits
Figure 9: Example Temperature Test Point Location
Table 7: Thermal Impedance
PDF: 09005aef840eff89
1gbddr2_ait_aat.pdf – Rev. C 7/11 EN
Parameter
Storage temperature
Operating temperature: commercial
Operating temperature: industrial
Operating temperature: automotive
Die Revision Package
H
1
60-ball
84-ball
Notes:
Note:
Test point
1. MAX storage case temperature T
2. MAX operating case temperature T
3. Device functionality is not guaranteed if the device exceeds maximum T
4. Both temperature specifications must be satisfied.
5. Operating ambient temperature surrounding the package.
1. Thermal resistance data is based on a number of samples from multiple lots and should
Substrate
(pcb)
2-layer
4-layer
2-layer
4-layer
in Figure 9. This case temperature limit is allowed to be exceeded briefly during package
reflow, as noted in Micron technical note TN-00-15, “Recommended Soldering Parame-
ters.”
in Figure 9.
tion.
be viewed as a typical number.
Lmm x Wmm FBGA
Width (W)
θ θ JA (°C/W)
Airflow =
0m/s
72.5
54.5
68.8
51.3
0.5 (W)
0.5 (L)
Length (L)
Electrical Specifications – Absolute Ratings
21
θ JA (°C/W)
Airflow =
1m/s
55.5
45.7
52.0
42.7
1Gb: x8, x16 Automotive DDR2 SDRAM
STG
Symbol
C
T
is measured in the center of the package, as shown
T
T
T
T
T
Micron Technology, Inc. reserves the right to change products or specifications without notice.
STG
is measured in the center of the package, as shown
A
A
C
C
C
θ JA (°C/W)
Airflow =
2m/s
49.5
42.3
46.5
39.6
Min
–55
–40
–40
–40
–40
0
Max
150
105
105
θ JB (°C/W)
35.6
35.2
32.5
32.3
85
95
85
2010 Micron Technology, Inc. All rights reserved.
Units
°C
°C
°C
°C
°C
°C
C
during opera-
θ JC (°C/W)
5.7
5.6
Notes
2, 3, 4
2, 3, 4
2, 3
4, 5
4, 5
1