FLU10ZMTE1 Sumitomo Electric, FLU10ZMTE1 Datasheet - Page 5

• Manufacturer Part Number: FLU10ZMTE1
• Description: GaAs FET designed for base station and CPEapplication up to a 3.0GHz frequency range
• Manufacturer: Sumitomo Electric

Edition 1.1
Apr. 2012
IMD vs OUTPUT POWER(2-tone)
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
-25
-30
-35
-40
-45
-50
-55
-60
12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
W-CDMA SINGLE CARRIER ACLR
Note : *All signal are W-CDMA modulation at 3GPP3.4.12-00 BS-1 64ch non clipping.
15
Output P ow er(2-tone) [dB m] @ df=+5MH z
16
All data was taken with the board tuned for wide band.
17
1.8GH z
2.0GH z
2.2GH z
1
-5M Hz
+ 5M Hz
-10M Hz
+ 10M Hz
IM3
18
Output P ow er[dB m ]
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*fo=2.1325G H z
20 21
@ VDS=10V IDS(DC)=150mA VGS(DC)=-0.9V
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23
IM5
24
25
26
5
W-CDMA SINGLE CARRIER CCDF AND GAIN
L-Band Medium & High Power GaAs FET
-25
-30
-35
-40
-45
-50
-55
-60
15
14
13
12
11
10
W-CDMA 2-CARRIER IMD(ACLR)
9
8
7
6
5
15
12
16
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2-tone total O utput Powe r [dBm]
*fo=2.1325G Hz *f1=2.1475G Hz
0.01%
P e a k
Ga in
IM 3-L
IM 3-U
IM 5-L
IM 5-U
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Output P ow er [dB m]
*fo=2.1325G Hz
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19
FLU10ZME1
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