FLU10ZMTE1 Sumitomo Electric, FLU10ZMTE1 Datasheet

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FLU10ZMTE1

Manufacturer Part Number
FLU10ZMTE1
Description
GaAs FET designed for base station and CPEapplication up to a 3.0GHz frequency range
Manufacturer
Sumitomo Electric
Datasheet
1.FLU10ZMTE1.pdf (8 pages)
Edition 1.1
Apr. 2012
FEATURES
・High Output Power: P1dB=29.5dBm(typ.)
・High Gain: G1dB=13.0dB(typ.)
・Low Cost Plastic(SMT) Package
・Tape and Reel Available
DESCRIPTION
The FLU10ZME1 is a GaAs FET designed for base station and CPE
application up to a 3.0GHz frequency range. This is a new product
series using a plastic surface mount package that has been optimized
for high volume cost driven applications.
SEDI’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C)
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25deg.C)
Drain Current
Trans Conductance
Pinch-off Voltage
Power Gain at 1dB G.C.P.
Output Power at 1dB G.C.P.
Thermal Resistance
Gate-Source Breakdown
Voltage
Gate Resistance
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C)
Gate-Soutce Voltage
Storage Temperature
Channel Temperature
Channel Temperature
Reverse Gate Current
Note : Based on EIAJ ED-4701 C-111A (C=100pF,R=1.5kohm)
Drain-Source Voltage
Total Power Dissipation
DC Input Voltage
Forward Gate Current
CASE STYLE: ZM
Note1: Product supplied to this specification are 100% DC performance tested.
Note2:The RF parameters are measured on a lot basis by sample testing 10 pcs/lot.
ESD
Acceptance Criteria:(accept/reject)=(0/1). Any lot failure shall be 100% retested.
Item
Item
Item
Class II
Symbol
V
G
P
I
R
DSS
GSO
gm
V
1dB
1dB
th
p
500
to
Symbol
Symbol
V
T
T
V
V
T
P
I
I
R
GF
GR
DS
stg
CH
DS
ch
GS
1999 V
T
g
V
f=2.0GHz
I
V
V
V
I
Channel to Case
DS
GS
DS
DS
DS
DS
Test Conditions
=0.6I
=-15 A
=10V
=5V,V
=5V,I
=5V,I
1
DSS
DS
DS
GS
(Typ.)
=200mA
=15mA
L-Band Medium & High Power GaAs FET
=0V
-55 to +150
Condition
-1.0
12.0
Min.
28.5
-5
Rating
-
-
175
-
＜145
15
6.9
＜10
＜4.8
＞-0.5
-5
400
G.C.P.:Gain Compression Point
Limit
Typ.
13.0
-2.0
29.5
150
300
15
-
FLU10ZME1
Max.
450
-3.5
18
-
-
-
-
deg.C
Unit
deg.C/W
mA
mS
ohm
mA
Unit
dBm
mA
V
Unit
V
dB
deg.C
deg.C
W
V
V
V

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FLU10ZMTE1 Summary of contents

Page 1

FEATURES ・High Output Power: P1dB=29.5dBm(typ.) ・High Gain: G1dB=13.0dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU10ZME1 is a GaAs FET designed for base station and CPE application 3.0GHz frequency range. This is a new ...

Page 2

Edition 1.1 Apr. 2012 L-Band Medium & High Power GaAs FET POWER DERATING CURVE 100 Case Temperature [deg.C] OUTPUT POWER , POWER ADDED EFFICIENCY vs. INPUT POWER f= 2.0G ...

Page 3

S-PARAMETER +50j +25j +10j 3.0 0 2.0GHz 3.0 2.0GHz -10j 1.0 -25j -50j Freq. S11 [GHz] MAG 0.5 0.88 1 0.78 1.5 0.75 2 0.72 2.5 0.71 3 0.69 3.5 0.73 4 0.76 4.5 0.79 5 ...

Page 4

OUTPUT POWER , DRAIN CURRENT vs. INPUT POWER with Wide band tuning condition. P in-P out,Idd& P .A.E @ f=1.8GH out Ids .A. ...

Page 5

IMD vs OUTPUT POWER(2-tone) -25 -30 1.8GH z 2.0GH z -35 2.2GH z 1 -40 -45 IM3 -50 -55 -60 -65 - Output P ow ...

Page 6

Recommended Bias Circuit and Internal Block Diagram (Wide band tuning condition) <Board information> r=3.5 , t=0.8 * Board was tuned for wide band performance that is presented in page 4 and 5. Edition 1.1 Apr. 2012 ...

Page 7

Package Outline Edition 1.1 Apr. 2012 FLU10ZME1 L-Band Medium & High Power GaAs FET 7 ...

Page 8

For further information please contact: http://global-sei.com/Electro-optic/about/office.html This product contains gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter ...

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