FLU10ZMTE1 Sumitomo Electric, FLU10ZMTE1 Datasheet - Page 4

• Manufacturer Part Number: FLU10ZMTE1
• Description: GaAs FET designed for base station and CPEapplication up to a 3.0GHz frequency range
• Manufacturer: Sumitomo Electric

Edition 1.1
Apr. 2012
OUTPUT POWER , DRAIN CURRENT vs. INPUT POWER with Wide band tuning condition.
35
30
25
20
15
10
35
30
25
20
15
10
4
4
6
6
P in-P out,Idd& P .A.E @ f=2.2GH z
P in-P out,Idd& P .A.E @ f=1.8GH z
8 10 12 14 16 18 20 22 24 26
8 10 12 14 16 18 20 22 24 26
P out
Ids[m A]
P .A.E.
Input P ow er [dB m]
P out
Ids[m A]
P .A.E.
Input P ow er [dB m]
@ VDS=10V IDS(DC)=150mA VGS(DC)=-0.9V
300
260
220
180
140
100
300
260
220
180
140
100
75
50
25
0
75
50
25
0
4
35
30
25
20
15
10
L-Band Medium & High Power GaAs FET
35
30
25
20
15
4
OUTPUT POWER vs. FREQUENCY
1.7
6
Pin-Pout,Idd& P.A.E @ f=2.0GH z
8 10 12 14 16 18 20 22 24 26
Pout
Ids[mA]
P.A.E.
Input Pow er [dB m]
1.9
Frequency[GHz]
2.1
FLU10ZME1
2.3
300
260
220
180
140
100
Pin=25dBm
Pin=20dBm
P1dB
Pin=15dBm
Pin=5dBm
Pin=10dBm
75
50
25
0