BAV70W T/R NXP Semiconductors, BAV70W T/R Datasheet - Page 2

• Manufacturer Part Number: BAV70W T/R
• Description: diode switching 100v 0.175a 3-pin umt t/r...
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
The BAV70W consists of two high-speed switching diodes
with common cathodes, fabricated in planar technology,
and encapsulated in the very small SOT323 plastic SMD
package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
2002 Apr 05
Per diode
V
V
I
I
I
P
T
T
F
FRM
FSM
SYMBOL
stg
j
Very small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage: max. 75 V
Repetitive peak reverse voltage: max. 85 V
Repetitive peak forward current: max. 500 mA.
High-speed switching in e.g. surface mounted circuits.
RRM
R
tot
High-speed double diode
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward
current
total power dissipation
storage temperature
junction temperature
PARAMETER
see Fig.4
single diode loaded; note 1; see Fig.2
double diode loaded; note 1; see Fig.2
square wave; T
T
amb
t = 1 s
t = 1 ms
t = 1 s
= 25 C; note 1
2
CONDITIONS
PINNING
handbook, halfpage
j
= 25 C prior to surge;
Marking code: A4.
Fig.1
PIN
1
2
3
Simplified outline (SOT323; SC-70) and
symbol.
1
Top view
anode (a1)
anode (a2)
common cathode
3
2
65
MIN.
DESCRIPTION
MAM382
1
Product specification
85
75
175
100
500
4
1
0.5
200
+150
150
MAX.
BAV70W
3
V
V
mA
mA
mA
A
A
A
mW
C
C
UNIT
2