BAV70W,115 NXP Semiconductors, BAV70W,115 Datasheet
BAV70W,115
Manufacturer Part Number
BAV70W,115
Description
DIODE DUAL 100V 175MA H-S SC-70
Manufacturer
NXP Semiconductors
Datasheet
1.BAV70T115.pdf
(15 pages)
Specifications of BAV70W,115
Package / Case
SC-70-3, SOT-323-3
Mounting Type
Surface Mount
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
4ns
Current - Reverse Leakage @ Vr
500nA @ 80V
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io) (per Diode)
175mA
Diode Configuration
1 Pair Common Cathode
Product
Switching Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
0.175 A
Max Surge Current
4 A
Configuration
Dual Common Cathode
Recovery Time
4 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
0.5 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934024390115::BAV70W T/R::BAV70W T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAV70W,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1.
I
I
I
I
I
Table 2.
[1]
Type number Package
BAV70
BAV70M
BAV70S
BAV70T
BAV70W
Symbol
Per diode
I
V
t
R
rr
R
BAV70 series
High-speed switching diodes
Rev. 07 — 27 November 2007
High switching speed: t
Low leakage current
Small SMD plastic packages
High-speed switching
General-purpose switching
When switched from I
Product overview
Quick reference data
Parameter
reverse current
reverse voltage
reverse recovery time
NXP
SOT23
SOT883
SOT363
SOT416
SOT323
F
= 10 mA to I
JEITA
-
SC-101
SC-88
SC-75
SC-70
rr
4 ns
R
= 10 mA; R
JEDEC
TO-236AB small
-
-
-
-
Conditions
V
R
= 80 V
L
= 100 ; measured at I
I
I
Low capacitance: C
Reverse voltage: V
Package
configuration
leadless ultra
small
very small
ultra small
very small
[1]
Min
-
-
-
R
= 1 mA.
Configuration
dual common cathode
dual common cathode
quadruple common
cathode/common cathode
dual common cathode
dual common cathode
Typ
-
-
-
Product data sheet
R
d
100 V
1.5 pF
Max
0.5
100
4
Unit
V
ns
A
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