BUK7608-40B /T3 Philips, BUK7608-40B /T3 Datasheet - Page 8

• Manufacturer Part Number: BUK7608-40B /T3
• Description: Semiconductors and Actives, mosfet
• Manufacturer: Philips

Philips Semiconductors
9397 750 11234
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
V GS(th)
I
T
g fs
(V)
D
(S)
j
= 1 mA; V
= 25 C; V
60
40
20
0
5
4
3
2
1
0
junction temperature.
drain current; typical values.
-60
0
DS
DS
= V
= 25 V
0
GS
20
60
max
typ
min
40
120
I D (A)
T j ( C)
03aa32
03nm26
180
60
Rev. 01 — 08 April 2003
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
(pF)
T
V
3000
2000
1000
(A)
I D
C
j
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
GS
= 25 C; V
0
gate-source voltage.
as a function of drain-source voltage; typical
values.
10 -2
= 0 V; f = 1 MHz
0
DS
10 -1
= V
BUK75/7608-40B
TrenchMOS™ standard level FET
GS
2
min
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
1
C iss
C oss
C rss
typ
4
max
10
V GS (V)
V DS (V)
03aa35
03nm31
10 2
6
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