BUK7608-40B /T3 Philips, BUK7608-40B /T3 Datasheet - Page 5

• Manufacturer Part Number: BUK7608-40B /T3
• Description: Semiconductors and Actives, mosfet
• Manufacturer: Philips

Philips Semiconductors
5. Characteristics
Table 4:
T
9397 750 11234
Product data
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
L
DSS
GSS
d(on)
r
d(off)
f
j
d
s
(BR)DSS
GS(th)
DSon
iss
oss
rss
g(tot)
gs
gd
= 25 C unless otherwise specified.
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
Conditions
I
V
V
V
Figure 7
V
I
V
f = 1 MHz;
V
V
from drain lead 6 mm from
package to center of die
from contact screw on
mounting base to center of die
SOT78
from upper edge of drain
mounting base to center of die
SOT404
from source lead 6 mm from
package to source bond pad
D
D
D
DS
GS
GS
GS
GS
DD
GS
T
T
T
T
T
T
T
T
T
= 0.25 mA; V
= 1 mA; V
= 25 A;
j
j
j
j
j
j
j
j
j
= 40 V; V
= 25 C
= 55 C
= 25 C
= 175 C
= 55 C
= 25 C
= 175 C
= 20 V; V
= 10 V; I
= 25 C
= 175 C
= 10 V; V
= 0 V; V
= 30 V; R
= 10 V; R
Rev. 01 — 08 April 2003
and
Figure 14
Figure 12
DS
DS
D
8
GS
DD
L
G
= 25 A;
DS
= V
GS
= 25 V;
= 1.2 ;
= 10
= 0 V
= 32 V;
= 0 V
= 0 V
GS
;
Figure 9
Min
40
36
2
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BUK75/7608-40B
TrenchMOS™ standard level FET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Typ
-
-
3
-
-
0.02
-
2
6.6
-
36
9
12
2017
486
213
20
51
51
33
4.5
3.5
2.5
7.5
Max
-
-
4
-
4.4
1
500
100
8
15.2
-
-
-
2689
583
291
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
nA
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
nH
5 of 15
A
A