BUK7608-40B /T3 Philips, BUK7608-40B /T3 Datasheet - Page 2

• Manufacturer Part Number: BUK7608-40B /T3
• Description: Semiconductors and Actives, mosfet
• Manufacturer: Philips

Philips Semiconductors
3. Limiting values
Table 2:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
9397 750 11234
Product data
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
DR
DRM
DS
DGR
GS
tot
stg
j
DS(AL)S
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
reverse drain current (DC)
peak reverse drain current
non-repetitive drain-source avalanche
energy
Limiting values
Conditions
T
Figure 2
T
T
Figure 3
T
T
T
unclamped inductive load; I
V
starting T
Rev. 01 — 08 April 2003
R
mb
mb
mb
mb
mb
mb
DS
GS
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 20 k
40 V; V
and
mb
= 25 C
3
Figure 1
GS
GS
GS
= 10 V; R
= 10 V;
= 10 V;
p
p
10 s;
10 s
GS
Figure 2
D
= 75 A;
= 50 ;
BUK75/7608-40B
TrenchMOS™ standard level FET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
[1]
[2]
[1]
[1]
[2]
Min
-
-
-
-
-
-
-
-
-
-
-
-
55
55
Max
40
40
101
75
71
407
157
+175
+175
101
75
407
241
20
Unit
V
V
V
A
A
A
A
W
A
A
A
mJ
C
C
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