IRKH26/16 Ruttonsha, IRKH26/16 Datasheet - Page 20

• Manufacturer Part Number: IRKH26/16
• Description: diode, volt, Discretes (diodes, transistors, thyristors ...), Semiconductors and Actives, amp, scr
• Manufacturer: Ruttonsha

700
600
500
400
300
200
100
Rate Of Fall Of On-state Current - di/dt (A/µs)
10
Fig. 57 - Recovery Charge Characteristics
IRK.71.. Series
IRK.91.. Series
T = 125 °C
20
0.01
J
100
0.1
0.1
10
0.001
0.001
1
1
30
b)Recommended load line for
Rectangular gate pulse
a)Recommended load line for
Steady State Value:
R
R
(DC Operation)
rated di/dt: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
<= 30% rated di/dt: 15 V, 40 ohms
tr = 1 µs, tp >= 6 µs
thJC
thJC
40
VGD
50
= 0.33 K/W
= 0.27 K/W
IGD
0.01
60
POWER MODULES
Fig. 59 - Thermal Impedance Z
I
TM
70
0.01
= 200 A
80
100 A
20 A
10 A
50 A
Square Wave Pulse Duration (s)
Instantaneous Gate Current (A)
0.1
90 100
Fig. 60 - Gate Characteristics
IRK.71../.91.. Series
(b)
(a)
0.1
1
IRK.71.. Series
IRK.91.. Series
thJC
Frequency Limited by PG(AV)
Characteristics
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
10
140
120
100
80
60
40
20
(4)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Per Junction
10
Fig. 58 - Recovery Current Characteristics
1
IRK.71.. Series
IRK.91.. Series
T = 125 °C
(3) (2)
J
20
100
30
IRK.71, .91 Series
40
(1)
50
Last Update : Sep 2002
1000
60
10
70
I
TM
80
= 200 A
100 A
20 A
50 A
10 A
90 100