IRKH26/16 Ruttonsha, IRKH26/16 Datasheet - Page 2

• Manufacturer Part Number: IRKH26/16
• Description: diode, volt, Discretes (diodes, transistors, thyristors ...), Semiconductors and Actives, amp, scr
• Manufacturer: Ruttonsha

ELECTRICAL SPECIFICATION
VOLTAGE RATINGS
ON-STATE CONDUCTION
(1) I
(3) 16.7% x π x I
IRK.26/41/56/71/91
I
I
I
I
or
I
I
I
V
r
V
V
di/dt
I
I
H
L
O(RMS)
TSM
FSM
2
2
T(AV)
F(AV)
t
t
√t
T(TO)
TM
FM
Type Number
2
t for time t
Parameter
Max.average on-state current(Thyristors)
Max.average forward current (Diodes)
Max. continuous RMS on-state current
Max. peak one cycle non-repetitive on-state 400
or forward current
Maximum I
Maximum I
Max. value of threshold
voltage (2)
Max. value of on-state
slope resistance (2)
Max. peak on-state or
forward voltage
Max. non-repetitive rate of rise
of turned on current
Maximum holding current
Max. latching current
x
= I
AV
2
< I < π x I
√t x √t
2
2
t for fusing
√t for fusing (1)
x
Voltage
Code
04
06
08
10
12
14
16
AV
(2) Average power = V
(4) π x I
V
RRM
and off-state blocking voltage
/ V
AV
IRK.26, .41, .56, .71, .91 SERIES
DRM
POWER MODULES
< I < 20 x π x I
, max. repetitive peak reverse
IRK.26 IRK.41 IRK.56 IRK.71 IRK.91 Units Conditions
12.11
11.82
8000
1100
0.92
0.95
1.95
1.95
335
470
800
560
150
200
400
27
27
60
1000
1200
1400
1600
400
600
800
V
T(TO)
36100 85000 138600 159100 A
3610
2560
4420
0.88
0.91
5.90
1.81
1.81
5.74
100
850
715
940
150
200
400
AV
45
45
x I
T(AV)
10050
1310
1450
8500
6050
1100
0.85
0.88
3.53
3.41
1.54
1.54
135
150
200
400
+ r
60
60
t
x (I
13860 15910
17110 20000
T(RMS
1665
1400
1850
9800
0.82
0.85
3.00
2.90
1.59
1.59
165
150
200
400
75
75
)
2
11250
1785
1500
2000
V
0.85
0.80
2.40
2.25
1.58
1.58
210
150
200
400
95
95
RSM
peak reverse voltage
, max. non-repetitive
A /µ s I
A
A
A
mΩ
mΩ
mA
mA
A
A
A
A
A
V
V
V
V
A
2
2
2
2
1300
1500
1700
1100
s
s
s
s
500
700
900
V
180
T
As AC switch
t = 10ms No voltage
t = 10ms 100% V
t = 10ms T
t = 10ms No voltage
t = 10ms 100% V
t = 10 ms T
t = 0.1 to 10ms. No voltage reapplied.
Low level (3)
High level
Low level (3)
High level
I
I
T
t
T
resistive load, gate open circuit
T
resistive load
TM
FM
TM
r
C
J
J
J
< 0.5 µs, t
= 25
= 85
= 25
= 25
= π x I
= π x I
= π x I
0
C conduction, half sine wave
0
0
0
0
C
C, from 0.67 V
C, anode supply = 6V,
C, anode supply = 6V,
T(AV)
F(AV)
T(AV)
reapplied
reapplied
No voltage reapplied
reapplied
reapplied
No voltage reapplied
J
J
p
= 25
, I
= 25
> 6µs
g
= 500mA
0
0
C
C
RRM
RRM
Sinusodial half wave,
Initial T
Initial T
T
(4)
T
(4)
T
DRM
I
J
J
J
DRM
= 25
= T
= T
180
@ 125
J
J
/ I
0
max.
max.
mA
J
J
C
RRM
20
20
20
20
20
20
20
0
= T
= T
conduction
0
max.
J
J
C
max.
max.