IRKH26/16 Ruttonsha, IRKH26/16 Datasheet - Page 14

• Manufacturer Part Number: IRKH26/16
• Description: diode, volt, Discretes (diodes, transistors, thyristors ...), Semiconductors and Actives, amp, scr
• Manufacturer: Ruttonsha

500
450
400
350
300
250
200
150
100
Rate Of Fall Of On-state Current - di/dt (A/µs)
10
Fig. 33 - Recovery Charge Characteristics
IRK.41.. Series
IRK.56.. Series
T = 125 °C
J
20
0.01
100
0.1
0.1
10
0.001
0.001
1
1
30
b)Recommended load line for
Rectangular gate pulse
a)Recommended load line for
Steady State Value:
R
R
(DC Operation)
<= 30% rated di/dt: 20 V, 65 ohms
tr = 1 µs, tp >= 6 µs
rated di/dt: 20 V, 30 ohms
tr = 0.5 µs, t p >= 6 µs
40
thJC
thJC
VGD
= 0.46 K/W
= 0.40 K/W
50
IGD
0.01
60
POWER MODULES
Fig. 35 - Thermal Impedance Z
I
70
0.01
TM
= 200 A
80
100 A
50 A
20 A
10 A
Instantaneous Gate Current (A)
0.1
Square Wave Pulse Duration (s)
Fig. 36 - Gate Characteristics
90 100
IRK.41../.56.. Series
(b)
(a)
0.1
1
IRK.41.. Series
IRK.56.. Series
thJC
Frequency Limited by PG(AV)
Characteristics
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
10
110
100
(4) (3)
90
80
70
60
50
40
30
Rate Of Fall Of Forward Current - di/dt (A/µs)
Per Junction
10
Fig. 34 - Recovery Current Characteristics
1
20
(2) (1)
100
30 40
IRK.41, .56 Series
50
1000
60
10
IRK.41.. Series
IRK.56.. Series
T = 125 °C
70
J
I
TM
80
= 200 A
100 A
50 A
20 A
10 A
90 100