UBA2211AP PHILIPS [NXP Semiconductors], UBA2211AP Datasheet

no-image

UBA2211AP

Manufacturer Part Number
UBA2211AP
Description
Half-bridge power IC family for CFL lamps
Manufacturer
PHILIPS [NXP Semiconductors]
Datasheet
1. General description
2. Features and benefits
2.1 System integration
2.2 Burner current
2.3 Burner lifetime
2.4 Safety
The UBA2211 family of integrated circuits are a range of high voltage monolithic ICs for
driving Compact Fluorescent Lamps (CFL) in half-bridge configurations. The family is
designed to provide easy integration of lamp loads across a range of burner power and
mains voltages.
UBA2211
Half-bridge power IC family for CFL lamps
Rev. 3 — 26 August 2011
Integrated half-bridge power transistors
Integrated bootstrap diode
Integrated high voltage supply
Adjustable current controlled preheat mode enables the preheat time (t
RMS current control
Current controlled preheat with adjustable preheat time and preheat current
Minimum glow time control to support cold start
Lamp power independent from mains voltage variations
Lamp inductor saturation protection during ignition
Saturation Current Protection (SCP)
OverTemperature Protection (OTP)
Capacitive Mode Protection (CMP)
Overpower control
System shutdown when the burner fails to ignite
UBA2211A: 220 V mains; 13.5 ; 0.9 A maximum ignition current
UBA2211B: 220 V mains; 9 ; 1.35 A maximum ignition current
UBA2211C: 220 V mains; 6.6 ; 1.85 A maximum ignition current
Product data sheet
ph
) to be set

Related parts for UBA2211AP

UBA2211AP Summary of contents

Page 1

UBA2211 Half-bridge power IC family for CFL lamps Rev. 3 — 26 August 2011 1. General description The UBA2211 family of integrated circuits are a range of high voltage monolithic ICs for driving Compact Fluorescent Lamps (CFL) in half-bridge configurations. ...

Page 2

... Each device in the family incorporates the same controller functionality ensuring easy power scaling and roll-out across a complete range of CFLs 3. Applications  Compact Fluorescent Lamps for indoor and outdoor applications 4. Ordering information Table 1. Type number UBA2211AP/N1 UBA2211BP/N1 UBA2211CP/N1 UBA2211AT/N1 UBA2211BT/N1 UBA2211CT/N1 UBA2211 Product data sheet ...

Page 3

NXP Semiconductors 5. Block diagram UBA2211 O(ref)RMS OTP osc RC 8(7) CONTROLLED OSCILLATOR C osc SW 1( burn state 2 X SGND 2( 10, 13) UBA2211XT (SO14) pin ...

Page 4

NXP Semiconductors 6. Pinning information 6.1 Pinning 1 SW SGND 2 UBA2211P 3 FS SENSE 4 014aab092 Fig 2. Pin configuration for UBA2211XP (SOT97-1) 6.2 Pin description Table 2. Symbol SW SGND FS SENSE OUT DVDT ...

Page 5

NXP Semiconductors 7. Functional description 7.1 Supply voltage The UBA2211 family is powered using a start-up current source and a DVDT supply. When the voltage on pin HV increases, the V internal Junction gate Field-Effect Transistor (JFET) current source. The ...

Page 6

NXP Semiconductors The output voltage of the bridge changes with the falling edge of the signal on pin RC. The nominal half-bridge frequency is shown in f  osc nom The maximum frequency is 2.5  f internal LSPT and ...

Page 7

NXP Semiconductors during the preheat time, capacitive mode is sensed and the internal V discharged. The frequency sweep restarts at f 2.5 × f 0.6 × V Fig 5. 7.6 Ignition state The ignition state is ...

Page 8

NXP Semiconductors During the other oscillator clock cycle, the input of the squarer is connected to the internal reference voltage V current. This charge current is also added to capacitor C equal, then T 1  --------- - T osc ...

Page 9

NXP Semiconductors 2.5 × f 0.6 × V Fig 6. Remark: The glow time control is active as t 7.11 Saturation Current Protection (SCP) A critical parameter in the design of the lamp inductor is its saturation current. When the ...

Page 10

NXP Semiconductors 8. Limiting values Table 3. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter SENSE OUT I DVDT stg ...

Page 11

NXP Semiconductors 10. Characteristics Table 5. Characteristics  all voltages are measured with respect to SGND; positive currents flow into the IC. j Symbol Parameter Low-voltage supply Start-up state I current on pin ...

Page 12

NXP Semiconductors Table 5. Characteristics …continued  all voltages are measured with respect to SGND; positive currents flow into the IC. j Symbol Parameter Internal oscillator f internal oscillator frequency osc(int) f nominal oscillator frequency osc(nom) ...

Page 13

NXP Semiconductors 11. Application information D1 D4 L_N AC input R fuse L_L D2 D3 Fig 7. Application diagram for the SO14 devices The components used in Table 6. Number ...

Page 14

NXP Semiconductors D1 R fuse L_L AC input L_N D2 Fig 8. Application diagram for DIP8 devices The components used in Table 7. Number ...

Page 15

NXP Semiconductors 12. Package outline DIP8: plastic dual in-line package; 8 leads (300 mil pin 1 index 1 DIMENSIONS (inch dimensions are derived from the original mm dimensions UNIT max. min. max. ...

Page 16

NXP Semiconductors SO14: plastic small outline package; 14 leads; body width 3 pin 1 index 1 e DIMENSIONS (inch dimensions are derived from the original mm dimensions) A UNIT max. ...

Page 17

NXP Semiconductors 13. Revision history Table 8. Revision history Document ID Release date UBA2211 v.3 20110826 • Modifications: Data sheet status changed from preliminary to product. • Figure 8 “Application diagram for DIP8 devices” added. • Minor text and graphics ...

Page 18

NXP Semiconductors 14. Legal information 14.1 Data sheet status [1][2] Document status Product status Objective [short] data sheet Development Preliminary [short] data sheet Qualification Product [short] data sheet Production [1] Please consult the most recently issued document before initiating or ...

Page 19

NXP Semiconductors Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use neither qualified nor tested in accordance with automotive testing ...

Page 20

NXP Semiconductors 16. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features and benefits . . . . . . ...

Related keywords