PESD5V0L6US PHILIPS [NXP Semiconductors], PESD5V0L6US Datasheet - Page 6

• Manufacturer Part Number: PESD5V0L6US
• Description: Low capacitance 6-fold ESD protection diode arrays
• Manufacturer: PHILIPS [NXP Semiconductors]

Philips Semiconductors
9397 750 13537
Product data sheet
Fig 3. Peak pulse power as a function of exponential
Fig 5. Diode capacitance as a function of reverse
(pF)
P
(W)
C
pp
10
d
10
18
16
14
12
10
1
8
2
T
pulse duration t
voltage; typical values.
T
1
0
amb
amb
= 25 C.
= 25 C; f = 1 MHz.
1
10
p
2
; typical values.
10
2
3
10
3
4
001aaa192
001aaa194
t
p
V
( s)
R
PESD5V0L6UAS; PESD5V0L6US
(V)
Rev. 02 — 9 November 2004
10
5
4
Low capacitance 6-fold ESD protection diode arrays
Fig 4. Relative variation of peak pulse power as a
Fig 6. Relative variation of reverse leakage current as
P
I
RM(25˚C)
pp(25˚C)
P
I
RM
pp
10
1.2
0.8
0.4
10
1
0
1
function of junction temperature; typical
values.
a function of junction temperature; typical
values.
100
0
50
50
0
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
100
50
150
100
001aaa193
T
001aaa195
T
j
( C)
j
( C)
200
150
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