PESD5V0L6US PHILIPS [NXP Semiconductors], PESD5V0L6US Datasheet - Page 5

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PESD5V0L6US

Manufacturer Part Number
PESD5V0L6US
Description
Low capacitance 6-fold ESD protection diode arrays
Manufacturer
PHILIPS [NXP Semiconductors]
Datasheet

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Philips Semiconductors
6. Characteristics
Table 9:
T
[1]
[2]
9397 750 13537
Product data sheet
Symbol
Per diode
V
I
V
V
r
C
RM
dif
amb
RWM
(CL)R
(BR)
d
Non-repetitive current pulse 8/20 s exponentially decay waveform according to IEC 61000-4-5; see
Measured between each cathode on pins 1, 2, 3, 4, 5 or 8 and anode on pin 6 or 7.
= 25 C unless otherwise specified.
Characteristics
Parameter
reverse stand-off voltage
reverse leakage current
clamping voltage
breakdown voltage
differential resistance
diode capacitance
Conditions
V
I
I
I
I
V
see
PP
PP
R
R
RWM
R
= 1 mA
= 1 mA
= 0 V; f = 1 MHz;
= 1 A
= 2.5 A
PESD5V0L6UAS; PESD5V0L6US
Figure 5
Rev. 02 — 9 November 2004
= 5 V
Low capacitance 6-fold ESD protection diode arrays
[1] [2]
[1] [2]
Min
-
-
-
-
6.4
-
-
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Typ
-
8
-
-
6.8
-
16
Figure
1.
Max
5
25
10
15
7.2
100
19
Unit
V
nA
V
V
V
pF
5 of 14

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