BF862_00 NXP [NXP Semiconductors], BF862_00 Datasheet - Page 2

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BF862_00

Manufacturer Part Number
BF862_00
Description
N-channel junction FET
Manufacturer
NXP [NXP Semiconductors]
Datasheet
Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Silicon N-channel symmetrical junction field-effect
transistor in a SOT23 package. Drain and source are
interchangeable.
QUICK REFERENCE DATA
2000 Jan 05
V
V
I
P
T
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
DSS
y
j
High transition frequency for excellent sensitivity in
AM car radios
High transfer admittance.
Pre-amplifiers in AM car radios.
DS
GSoff
tot
N-channel junction FET
fs
SYMBOL
drain-source voltage
gate-source cut-off voltage
drain-source current
total power dissipation
transfer admittance
junction temperature
PARAMETER
CAUTION
2
PINNING SOT23
handbook, halfpage
Marking code: 2Ap.
PIN
Top view
1
2
3
T
CONDITIONS
s
Fig.1 Simplified outline and symbol.
2
90 C
source
drain
gate
3
10
35
MIN.
0.3
1
DESCRIPTION
45
TYP.
0.8
MAM036
Product specification
g
20
25
300
150
MAX.
1.2
BF862
V
V
mA
mW
mS
UNIT
C
d
s

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