EN29LV040A-55RPIP EON [Eon Silicon Solution Inc.], EN29LV040A-55RPIP Datasheet - Page 27

• Manufacturer Part Number: EN29LV040A-55RPIP
• Description: 4 Megabit (512K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
• Manufacturer: EON [Eon Silicon Solution Inc.]

WE#
DQ6
DQ2
Figure 10. Alternate CE# Controlled Write Operation Timings
Notes:
PA = address of the memory location to be programmed.
PD = data to be programmed at byte address.
VA = Valid Address for reading program or erase status
D
Figure 11. DQ2 vs. DQ6
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
Addresses
out
WE#
OE#
CE#
Data
= array data read at VA
t
GHEL
t
WS
Embedded
Erase
Enter
0x555 for Program
0x2AA for Erase
t
DS
t
WC
0xA0 for
Program
0x55 for Erase
t
CP
t
DH
Erase
t
PA for Program
SA for Sector Erase
0x555 for Chip Erase
CPH
t
t
AS
WH
Suspend
Erase
t
AH
PD for Program
0x30 for Sector Erase
0x10 for Chip Erase
Rev. E, Issue Date: 2011/10/27
Suspend
Enter
Read
27
t
WHWH1
Enter Erase
Suspend
Program
© 2003 Eon Silicon Solution, Inc.,
/ t
WHWH2
Status
Suspend
Program
Enter
VA
D
Erase
Suspend
Read
OUT
Resume
Erase
EN29LV040A
www.eonssi.com
Erase
Complete
Erase