EN29LV040A-55RPIP EON [Eon Silicon Solution Inc.], EN29LV040A-55RPIP Datasheet - Page 2

• Manufacturer Part Number: EN29LV040A-55RPIP
• Description: 4 Megabit (512K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
• Manufacturer: EON [Eon Silicon Solution Inc.]

EN29LV040A
4 Megabit (512K x 8-bit ) Uniform Sector,
CMOS 3.0 Volt-only Flash Memory
da0.
FEATURES
GENERAL DESCRIPTION
The EN29LV040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory, organized
as 524,288 bytes. Any byte can be programmed typically in 8µs. The EN29LV040A features 3.0V
voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT
states in high-performance microprocessor systems.
The EN29LV040A has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable (WE)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector
or full chip erase operation, where each Sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K
program/erase cycles on each Sector.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
• Fully compatible with EN29LV040
• Single power supply operation
- Full voltage range: 2.7-3.6 volt read and write
- Regulated voltage range: 3.0-3.6 volt read
• High performance
- Access times as fast as 45 ns
• Low power consumption (typical values at 5
- 7 mA typical active read current
- 15 mA typical program/erase current
- 1 μA typical standby current (standard access
• Flexible Sector Architecture:
- Eight 64 Kbyte sectors
- Supports full chip erase
- Individual sector erase supported
- Sector protection and unprotection:
operations for battery-powered applications.
and write operations for high performance
3.3 volt microprocessors.
time to active mode)
MHz)
Hardware locking of sectors to prevent
program or erase operations within individual
sectors
Rev. E, Issue Date: 2011/10/27
2
• High performance program/erase speed
- Byte/Word program time: 8µs typical
- Sector erase time: 500ms typical
• JEDEC Standard program and erase
• JEDEC standard DATA polling and toggle
• Single Sector and Chip Erase
• Embedded Erase and Program Algorithms
• Erase Suspend / Resume modes:
• triple-metal double-poly triple-well CMOS
• Low Vcc write inhibit < 2.5V
•
• Package options
• Commercial and industrial Temperature
Read or program another Sector during
Erase Suspend Mode
commands
bits feature
Flash Technology
minimum 100K program/erase endurance
cycle
- 8mm x 14mm 32-pin TSOP (Type 1)
- 32-pin PLCC
- 32-pin PDIP
Range
© 2003 Eon Silicon Solution, Inc.,
EN29LV040A
www.eonssi.com