EN29LV040A EON [Eon Silicon Solution Inc.], EN29LV040A Datasheet - Page 20

• Manufacturer Part Number: EN29LV040A
• Description: 4 Megabit (512K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
• Manufacturer: EON [Eon Silicon Solution Inc.]

Table 7. DC Characteristics
(T
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
Symbol
V
a
I
I
I
I
V
V
I
CC1
CC2
CC3
CC4
V
V
V
I
LKO
= 0°C to 70°C or - 40°C to 85°C; V
I
LO
OH
ID
OL
LI
IH
ID
IL
Supply Current (Program or Erase)
A9 Voltage (Electronic Signature)
A9 Current (Electronic Signature)
Supply Current (Standby - CMOS)
Supply Current (read - CMOS)
Output High Voltage CMOS
Supply voltage (Erase and
Output High Voltage TTL
Output Leakage Current
Automatic Sleep Mode
Input Leakage Current
Output Low Voltage
Input High Voltage
Input Low Voltage
Program lock-out)
Parameter
CC
= 2.7-3.6V)
Byte program, Sector or
Chip Erase in progress
CE# = V
Rev. A, Issue Date: 2005/08/16
CE# = Vcc ± 0.3V
V
V
Test Conditions
0V≤ V
20
I
0V≤ V
IH
IL
I
OH
I
OH
OL
= Vss ± 0.3 V
= Vcc ± 0.3 V
f = 5MHz
A9 = V
= -100 µA,
IL
= -2.0 mA
= 4.0 mA
OUT
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
IN
; OE# = V
≤ Vcc
≤ Vcc
ID
IH
;
0.85 x
Vcc -
0.7 x
0.4V
10.5
-0.5
Min
Vcc
Vcc
2.3
EN29LV040A
Typ
15
7
1
1
Vcc ±
Max
0.45
11.5
100
5.0
5.0
0.8
0.3
2.5
±1
±1
12
30
Unit
mA
mA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V