IC61LV256-10JG ICSI [Integrated Circuit Solution Inc], IC61LV256-10JG Datasheet - Page 8

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IC61LV256-10JG

Manufacturer Part Number
IC61LV256-10JG
Description
32K x 8 Hight Speed SRAM with 3.3V
Manufacturer
ICSI [Integrated Circuit Solution Inc]
Datasheet
IC61LV256
WRITE CYCLE NO. 3
Notes:
1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write,
2. I/O will assume the High-Z state if OE > V
8
WRITE CYCLE NO. 2
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the Write.
ADDRESS
ADDRESS
D
D
OUT
OUT
WE
D
WE
D
OE
CE
OE
CE
IN
IN
LOW
LOW
LOW
t
SA
(WE Controlled, OE is LOW During Write Cycle)
(WE Controlled, OE is HIGH During Write Cycle)
t
DATA UNDEFINED
DATA UNDEFINED
SA
IH
.
VALID ADDRESS
t
t
t
t
AW
AW
HZWE
HZWE
VALID ADDRESS
t
t
PWE1
WC
t
t
PWE2
WC
HIGH-Z
HIGH-Z
t
t
SD
SD
DATA
DATA
(1)
(1,2)
IN
IN
VALID
VALID
t
t
HD
HD
Integrated Circuit Solution Inc.
t
t
LZWE
LZWE
t
t
HA
HA
AHSR027-0B
11/28/2003

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