29F0408RPFB MAXWELL [Maxwell Technologies], 29F0408RPFB Datasheet
29F0408RPFB
Related parts for 29F0408RPFB
29F0408RPFB Summary of contents
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F : EATURES • Single 5.0 V supply • Excellent Single Event Effect · - SEL : > 60 MeV/mg/ · - SEU : = 37 MeV/mg/ SEU saturated cross section: 2E-6 cm • ...
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Megabit (4M x 8-Bit) Flash Memory YMBOL 2 Command Latch The CLE input controls the path activation for commands sent to the command register. Enable (CLE) When active high, commands are latched into the command register ...
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Megabit (4M x 8-Bit) Flash Memory T 2. 29F0408 A ABLE P ARAMETER Voltage on any pin relative Operating Temperature Storage temperature Short circuit output current 1. Minimum DC voltage is -0 input/output pins. ...
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Megabit (4M x 8-Bit) Flash Memory T 6. 29F0408 DC ABLE ( ± 10 ARAMETER YMBOL Operating current Sequential I CC1 read Program I CC2 Erase I CC3 Stand-by-current (TTL) I SB1 ...
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Megabit (4M x 8-Bit) Flash Memory CLE ALE When SE is ...
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Megabit (4M x 8-Bit) Flash Memory T 10. 29F0408 AC T ABLE ( ± 10 ARAMETER CLE set-up time CLE hold time CE setup time CE hold time WE pulse width ALE setup ...
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Megabit (4M x 8-Bit) Flash Memory T 11. 29F0408 AC C ABLE ( ± 10 ARAMETER CE low to status output RE high to WE low WE high to RE low RE access ...
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Megabit (4M x 8-Bit) Flash Memory block information and create the invalid block table via the following suggested flow chart (Figure 1). Any intentional erasure of the original block information is prohibited IGURE Error in write ...
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Megabit (4M x 8-Bit) Flash Memory IGURE ROGRAM FLOW CHART All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 9 ©2002 Maxwell Technologies All rights reserved. ...
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Megabit (4M x 8-Bit) Flash Memory IGURE RASE LOW HART All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 10 ©2002 Maxwell Technologies All rights reserved. ...
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Megabit (4M x 8-Bit) Flash Memory IGURE EAD LOW HART IGURE LOCK EPLACEMENT All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 11 ©2002 Maxwell Technologies ...
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Megabit (4M x 8-Bit) Flash Memory Pointer Operation: The 29F0408 has three modes to set the destination of the pointer. The pointer is set to “A” area by the “00h” com- mand, to “B” area by the “01h” command, ...
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Megabit (4M x 8-Bit) Flash Memory IGURE XAMPLES OF T ABLE System Interface Using CE don’t-care. For a easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal ...
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Megabit (4M x 8-Bit) Flash Memory IGURE Timing requirements exerted high during data-loading, tCS must be minimum 10ns and tWC must be increased accord- ingly. F IGURE ROGRAM PERATION ...
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Megabit (4M x 8-Bit) Flash Memory F 10 IGURE OMMAND ATCH YCLE F 11 IGURE DDRESS ATCH YCLE All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 15 ©2002 ...
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Megabit (4M x 8-Bit) Flash Memory F F 13. S IGURE EQUENTIAL 12 IGURE NPUT ATA ATCH YCLE (CLE = ALE = L) UT YCLE AFTER EAD All ...
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Megabit (4M x 8-Bit) Flash Memory F IGURE F 14 IGURE TATUS EAD YCLE 15. READ1 PERATION EAD All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 P ) ...
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Megabit (4M x 8-Bit) Flash Memory F 16. READ1 O IGURE F IGURE (I PERATION NTERCEPTED BY 17. READ2 PERATION EAD All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 CE) P ...
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Megabit (4M x 8-Bit) Flash Memory F IGURE F 18 EQUENTIAL OW EAD 19 IGURE AGE ROGRAM PERATION All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 PERATION ...
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Megabit (4M x 8-Bit) Flash Memory F 20. B IGURE F 21. M IGURE LOCK RASE PERATION RASE & ANUFACTURE EVICE EAD All data sheets are subject to change without notice 11.08.02 ...
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Megabit (4M x 8-Bit) Flash Memory DEVICE OPERATION PAGE READ Upon initial device power up, the device defaults to Read1 mode. This operation is also initiated by writing 00h to the command register along with three address cycles. Once ...
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Megabit (4M x 8-Bit) Flash Memory F 22. READ1 O IGURE PERATION All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 22 ©2002 Maxwell Technologies All rights reserved. ...
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Megabit (4M x 8-Bit) Flash Memory F 23. READ2 O IGURE PERATION All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 23 ©2002 Maxwell Technologies All rights reserved. ...
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Megabit (4M x 8-Bit) Flash Memory F IGURE F 25. S IGURE 24 READ1 O EQUENTIAL OW READ2 O (SE = EQUENTIAL PERATION All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 PERATION ...
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Megabit (4M x 8-Bit) Flash Memory PAGE PROGRAM The device is programmed basically on a page basis, but it does allow multiple partial page programming of a byte or consecutive bytes up to 528 single page program ...
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Megabit (4M x 8-Bit) Flash Memory BLOCK ERASE The Erase operation can erase on a block (8K Byte) basis. Block address loading is accomplished in two cycles initiated by an Erase Setup command (60h). Only address A13 to A21 ...
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Megabit (4M x 8-Bit) Flash Memory T ABLE READ ID The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of 00h. Two read cycles sequentially output the manufacture ...
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Megabit (4M x 8-Bit) Flash Memory RESET The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random read, program or erase modes, the reset operation will ...
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Megabit (4M x 8-Bit) Flash Memory F IGURE READY/BUSY The device has a R/B output that provides a hardware method of indicating the completion of a page pro- gram, erase and random read completion. The R/B pin is normally ...
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Megabit (4M x 8-Bit) Flash Memory F 31. READY/BUSY IGURE All data sheets are subject to change without notice 11.08.02 Rev 2 29F0408 30 ©2002 Maxwell Technologies All rights reserved. ...
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Megabit (4M x 8-Bit) Flash Memory S YMBOL ® LAT ACKAGE D IMENSION ...
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Megabit (4M x 8-Bit) Flash Memory Important Notice: These data sheets are created using the chip manufacturer’s published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within ...
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Megabit (4M x 8-Bit) Flash Memory Product Ordering Options Model Number 29F0408 Feature Option Details Screening Flow Monolithic S = Maxwell Class Maxwell Class Industrial (testing @ -40°C, +25°C, +125°C) ...